Electrical characterization of growth-induced defects in bulk-grown ZnO

Superlattices and Microstructures

Volumn 39, Issue 1-4, 2006, Pages 17-23

  Auret, F D ^a   Nel, J M ^a   Hayes, M ^a   Wu, L ^a   Wesch, W ^b   Wendler, E ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; ELECTRIC FIELDS; ETCHING; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); FIELD DEPENDENCE; OXYGEN VACANCY; SEEDED CHEMICAL VAPOR TRANSPORT (SCVT);

CRYSTAL GROWTH FROM MELT;

EID: 29344444328     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.08.021     Document Type: Article

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