SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 178-179, Issue , 2011, Pages 130-135

Electronic properties of ZnO/Si heterojunction prepared by ALD

(7) Quemener, V a Alnes, M a Vines, L a Nilsen, O a Fjellvag H a Monakhov, E V a Svensson, B G a

a UNIVERSITY OF OSLO (Norway)

Author keywords

DLTS; Interface; Silicon; Zinc oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC RECTIFIERS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); IODINE; OHMIC CONTACTS; POWER QUALITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; VANADIUM; ZINC OXIDE; AFTER-HEAT TREATMENT; CAPACITANCE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; SILICON COMPOUNDS;

AFTER-HEAT TREATMENT; CAPACITANCE VOLTAGE; CONDUCTION BAND EDGE; CURRENT VOLTAGE; ELECTRICALLY ACTIVE DEFECTS; ENERGY POSITION; INTERFACE DEFECTS; PREFERRED ORIENTATIONS; ZNO; ZNO FILMS; ZNO/P-SI; CURRENT RECTIFICATIONS; DLTS MEASUREMENTS;

HETEROJUNCTIONS; WIDE BAND GAP SEMICONDUCTORS;

EID: 80053259903 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.178-179.130 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.