Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4386-4388

  Vines, L ^a   Monakhov, E V ^a   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONCENTRATION OF; CONCENTRATION VALUES; CONDUCTION BAND EDGE; DEFECT CENTERS; DLTS; E BEAM EVAPORATION; ENERGY POSITION; EXPERIMENTAL DATA; HEAT TREATMENT TEMPERATURE; HIGH TEMPERATURE TREATMENTS; HYDROTHERMALLY; IMPURITIES IN; SCHOTTKY BARRIER CONTACTS; TEMPERATURE RANGE; TEMPERATURE TREATMENTS; THERMAL TREATMENT; ZNO;

CONCENTRATION (PROCESS); ELECTRON MOBILITY; ELECTRON TRAPS; HEAT TREATMENT; IMPURITIES; MANGANESE; MANGANESE COMPOUNDS; PALLADIUM; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; THERMAL EVAPORATION; ZINC OXIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 71749099774     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.029     Document Type: Article

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