Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

Applied Physics Letters

Volumn 103, Issue 9, 2013, Pages

  Kolkovsky, Vl ^a   Zytkiewicz, Z R ^b   Sobanska, M ^b   Klosek, K ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; EXTENDED DEFECT; FREE CARRIER CONCENTRATION; RECTIFICATION RATIO; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SI(111) SUBSTRATE;

DEFECTS; ELECTRIC RECTIFIERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON NITRIDE;

GALLIUM NITRIDE;

EID: 84884191087     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819731     Document Type: Article

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