Detrimental effects of atomic hydrogen on the formation of Schottky barriers in p-type Ge

Semiconductor Science and Technology

Volumn 28, Issue 2, 2013, Pages

  Kolkovsky, Vl ^a   Klemm, S ^a   Allardt, M ^a   Weber, J ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; FERMI LEVEL PINNING; METAL EVAPORATION; P-TYPE; ROOM TEMPERATURE; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; WET CHEMICALS;

DOPING (ADDITIVES); HYDROGEN; SCHOTTKY BARRIER DIODES;

GERMANIUM;

EID: 84872957063     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/2/025007     Document Type: Article

References (31)

1. Johnson N M, Biegelsen D K and Moyer M D 1981 J. Vac. Technol. 19 390 (Pubitemid 12472817)
2. Chevallier J and Aucouturier M 1988 Ann. Rev. Mater. Sci. 18 219
3. Markevich V P, Hawkins I D, Peaker A R, Emtsev K V, Emtsev V V, Litvinov V V, Murin L I and Dobaczewski L 2004 Phys. Rev. B 70 235213 (Pubitemid 40270750)
4. Kolkovsky Vl, Christian Petersen M and Nylandsted Larsen A 2007 Appl. Phys. Lett. 90 112110 (Pubitemid 46439798)
5. Dobaczewski L, Bonde Nielsen K, Zangenberg N, Bech Nielsen B, Peaker A R and Markevich V P 2004 Phys. Rev. B 69 245207
6. Dimoulas A, Tsipas P, Sotiropoulos A and Evangelou E K 2006 Appl. Phys. Lett. 89 252110 (Pubitemid 46035146)
7. Thathachary A V, Bhat K N, Bhat N and Hegde M S 2010 Appl. Phys. Lett. 96 152108
8. Clauws P, Huylebroeck G, Simoen E, Vermaercke P, De Smet F and Vennik J 1989 Semicond. Sci. Technol. 4 910
9. Simoen E, Clauws P, Broeckx J, Vennik J, Van Sande M and De Laet L 1982 IEEE Trans. Nucl. Sci. NS-29 789
10. Kolkovsky Vl, Christian Petersen M, Mesli A, Van Gheluwe J, Clauws P and Nylandsted Larsen A 2008 Phys. Rev. B 78 233201
11. Kolkovsky Vl, Christian Petersen M, Mesli A and Nylandsted Larsen A 2010 Phys. Rev. B 81 035208
12. Han C C, Marshall E D, Fang F, Wang L C, Lau S S and Voreades D 1988 J. Vac. Sci. Technol. B 6 1662
13. Rivillon S, Chabal Y J, Amy F and Kahn A 2005 Appl. Phys. Lett. 87 253101 (Pubitemid 41816165)
14. Matsubara H, Sasada T, Takenaka M and Takagi S 2008 Appl. Phys. Lett. 93 032104
15. Kobayashi M, Kinoshita A, Saraswat K, Wong H-S P and Nishi Y 2009 J. Appl. Phys. 105 023702
16. Zhou Y, Ogawa M, Han X and Wang K L 2008 Appl. Phys. Lett. 93 202105
17. Lieten R R, Afanas'ev V V, Thoan N H, Degroote S, Walukiewicz W and Borghs G 2011 J. Electrochem. Soc. 158 H358
18. Allardt M, Kolkovsky Vl, Kolodinski S, Abrosimov N V, Irmscher K, Clauws P, Weber J and Zuber K 2011 Sol. State Phenom. 178-179 289
19. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Oxford University Press)
20. Werner J H 1988 Appl. Phys. A 47 291
21. Crowell C R 1965 Solid-State Electron. 8 395
22. Aubry V and Meyer F 1994 J. Appl. Phys. 76 7973
23. Blood P and Ornton J W 1992 The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (London: Academic Press)
24. Van de Walle C G and Neugebauer J 2003 Nature 423 626 (Pubitemid 36713219)
25. Budde M, Bech Nielsen B, Parks Cheney C, Tolk N H and Feldman L C 2000 Phys. Rev. Lett. 85 2965
26. Hiller M, Lavrov E V, Weber J, Hourahine B, Jones R and Briddon P R 2005 Phys. Rev. B 72 153201 (Pubitemid 43024160)
27. Weber J R, Janotti A, Rinke P and Van de Walle C G 2007 Appl. Phys. Lett. 91 142101 (Pubitemid 47531500)
28. Afanas'ev V V, Fedorenko Y G and Stesmans A 2005 Appl. Phys. Lett. 87 032107 (Pubitemid 41227612)
29. Kuzum D, Martens K, Krishnamohan T and Saraswat K C 2009 Appl. Phys. Lett. 95 252101
30. Thanailakis A and Northrop D C 1973 Solid-State Electron. 16 1383
31. Stutzmann M, Chevrier J-B, Herrero C P and Breitschwerdt A 1991 Appl. Phys. A 53 47