Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale

Volumn 6, Issue 15, 2014, Pages 8671-8680

  Fisichella, Gabriele ^a,b   Greco, Giuseppe ^a   Roccaforte, Fabrizio ^a   Giannazzo, Filippo ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GRAPHENE; MODULATION; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL BEHAVIORS; ELECTRONICS DEVICES; HIGH-SPEED OPERATION; SCANNING CAPACITANCE MICROSCOPY; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR HETEROSTRUCTURES; VERTICAL FIELD EFFECT TRANSISTORS;

HETEROJUNCTIONS;

EID: 84904364147     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c4nr01150c     Document Type: Article

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