Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 991-993

  Park, Pil Sung ^a   Nath, Digbijoy N ^a   Rajan, Siddharth ^a  

^a The Ohio State University   (United States)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); capacitance voltage (C V); N polar GaN; negative quantum; quantum capacitance; quantum displacement

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CAPACITANCE VOLTAGE; N-POLAR; NEGATIVE QUANTUM; QUANTUM CAPACITANCE; QUANTUM DISPLACEMENT;

CAPACITANCE; DISPLACEMENT MEASUREMENT; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862852889     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196973     Document Type: Article

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