Mapping the density of scattering centers limiting the electron mean free path in graphene

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4612-4618

  Giannazzo, Filippo ^a   Sonde, Sushant ^a,b   Nigro, Raffaella Lo ^a   Rimini, Emanuele ^a   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE VALUES; CHARGED IMPURITY; DEVICE FABRICATIONS; DIELECTRIC PERMITTIVITIES; DIELECTRIC SCREENING; ELECTRON MEAN FREE PATH; GATE BIAS; HIGH RESOLUTION; INHOMOGENEITIES; INHOMOGENEOUS DENSITY; INHOMOGENEOUS DISTRIBUTION; LATERAL INHOMOGENEITY; LIMITING FACTORS; NANO SCALE; NANO-DEVICES; NEUTRALITY POINT; PEROVSKITE STRONTIUM; RESONANT SCATTERERS; SCANNING CAPACITANCE MICROSCOPY; SCATTERING CENTERS; SCATTERING SOURCE; SRTIO; ULTRAFLAT;

CARRIER MOBILITY; CURVE FITTING; ELECTRONIC PROPERTIES; ELECTRONS; NANOSTRUCTURED MATERIALS; PEROVSKITE; SCATTERING; SILICA; SILICON CARBIDE; STRONTIUM; STRONTIUM TITANATES; SUBSTRATES;

GRAPHENE;

NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRON; MATERIALS TESTING; PARTICLE SIZE; RADIOMETRY; ULTRASTRUCTURE;

ELECTRONS; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; RADIOMETRY;

EID: 80755142847     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2020922     Document Type: Article

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