Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

Journal of Physics D: Applied Physics

Volumn 47, Issue 30, 2014, Pages

  Wehrfritz, Peter ^a   Fromm, Felix ^a   Malzer, Stefan ^b   Seyller, Thomas ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

doping; epitaxial graphene; field effect; silicon nitride

Indexed keywords

DOPING (ADDITIVES); GATE DIELECTRICS; GRAPHENE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC LAYER; ELECTRICAL CHARACTERIZATION; EPITAXIAL GRAPHENE; FIELD EFFECTS; FIELD-EFFECT DEVICES; HALL EFFECT MEASUREMENT; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SILICON NITRIDE (SIN);

SILICON NITRIDE;

EID: 84903977868     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/30/305103     Document Type: Article

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