Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

Journal of Physics D: Applied Physics

Volumn 43, Issue 34, 2010, Pages

  Ristein, Jürgen ^a   Zhang, Wenying ^a   Speck, Florian ^a   Ostler, Markus ^a   Ley, Lothar ^a   Seyller, Thomas ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC ENERGIES; DIRAC POINT; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; INTERFACE STATE; PH-DEPENDENT; ROOM TEMPERATURE; SIC(0 0 0 1); SINGLE LAYER; TRANSFER CHARACTERISTICS;

CARRIER MOBILITY; ELECTRON MULTIPLIERS; GRAPHENE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 77957137142     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/34/345303     Document Type: Article

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