Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration

Japanese Journal of Applied Physics

Volumn 53, Issue 5 SPEC. ISSUE 2, 2014, Pages

  Mizushima, Yoriko ^a,b   Kim, Youngsuk ^b,c   Nakamura, Tomoji ^a   Sugie, Ryuichi ^d   Hashimoto, Hideki ^d   Uedono, Akira ^e   Ohba, Takayuki ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c DISCO CORPORATION   (Japan)

^d TORAY RESEARCH CENTER INC   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL MECHANICAL POLISHING; DEFECTS; GRINDING (MACHINING); POSITRON ANNIHILATION SPECTROSCOPY; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

CHEMICAL MECHANICAL POLISHING(CMP); FRACTURE SURFACES; LASER MICROSCOPY; MECHANICAL STRESS; STRESS-FREE SURFACES; THREE DIMENSIONAL INTEGRATION; THROUGH SILICON VIAS; VACANCY-TYPE DEFECTS;

SILICON WAFERS;

EID: 84903317474     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.05GE04     Document Type: Article

References (28)

1. C. A. Bower, D. Malta, D. Temple, J. E. Robinson, P. R. Coffman, M. R. Skokan, and T. B. Welch, Proc. ECTC, 2006, p. 399.
2. J. A. Burns, B. F. Aull, C. K. Chen, C. L. Chen, C. L. Keast, J. M. Knecht, V. Suntharalingam, K. Warner, P. W. Wyatt, and D. R. W. Yost, IEEE Trans. Electron Devices 53, 2507 (2006).
3. T. Ohba, N. Maeda, H. Kitada, K. Fujimoto, K. Suzuki, T. Nakamura, A. Kawai, and K. Arai, Microelectron. Eng. 87, 485 (2010).
4. N. Maeda, H. Kitada, K. Fujimoto, K. Suzuki, T. Nakamura, and T. Ohba, presented at 25th Advanced Metallization Conf., 2008.
5. H. Kitada, N. Maeda, K. Fujimoto, K. Suzuki, A. Kawai, K. Arai, T. Suzuki, T. Nakamura, and T. Ohba, Proc. IITC, 2009, p. 107.
6. Y. S. Kim, A. Tsukune, N. Maeda, H. Kitada, A. Kawai, K. Arai, K. Fujimoto, K. Suzuki, Y. Mizushima, T. Nakamura, T. Ohba, T. Futatsugi, and M. Miyajima, IEDM Tech. Dig., 2009, p. 365.
7. N. Maeda, Y. S. Kim, Y. Hikosaka, T. Eshita, H. Kitada, K. Fujimoto, Y. Mizushima, K. Suzuki, T. Nakamura, A. Kawai, K. Arai, and T. Ohba, Proc. VLSI Technology, 2010, p. 105.
8. H. Kitada, N. Maeda, K. Fujimoto, Y. Mizushima, Y. Nakata, T. Nakamura, and T. Ohba, Jpn. J. Appl. Phys. 50, 05ED02 (2011).
9. H. Kitada, Y. Morikawa, N. Maeda, K. Fujimoto, Y. Mizushima, T. Nakamura, and T. Ohba, Ext. Abstr. 28th Advanced Metallization Conf., 2011, 5-1.
10. T. Ohba, ECS Trans. 44 [1], 827 (2012).
11. N. Maeda, H. Kitada, K. Fujimoto, Y. S. Kim, S. Kodama, S. Yoshimi, M. Akazawa, Y. Mizushima, and T. Ohba, Proc. VLSI Technology, 2012, p. 171.
12. Y. Mizushima, H. Kitada, K. Koshikawa, S. Suzuki, T. Nakamura, and T. Ohba, Jpn. J. Appl. Phys. 51, 05EE03 (2012).
13. Y. S. Kim, N. Maeda, H. Kitada, K. Fujimoto, S. Kodama, A. Kawai, K. Arai, K. Suzuki, T. Nakamura, and T. Ohba, Microelectron. Eng. 107, 65 (2013).
14. Y. Mizushima, H. Kitada, C. J. Uchibori, N. Maeda, S. Kodama, Y. S. Kim, K. Fujimoto, S. Yoshimi, T. Nakamura, and T. Ohba, Jpn. J. Appl. Phys. 52, 05FE01 (2013).
15. J. Chen and I. D. Wolf, Semicond. Sci. Technol. 18, 261 (2003).
16. Z. J. Pei, S. R. Billingsley, and S. Miura, Int. J. Mach. Tools Manuf. 39, 1103 (1999).
17. H. H. Jiun, I. Ahmad, A. Jalar, and G. Omar, Microelectron. Reliab. 46, 836 (2006).
18. L. Zhou, Y. B. Tian, H. Huang, H. Sato, and J. Shimizu, Proc. Inst. Mech. Eng. Part B: J. Eng. Manuf. 226, 66 (2012).
19. A. Uedono, S. Tanigawa, J. Sugiura, and M. Ogasawara, J. Appl. Phys. 28, 1293 (1989).
20. A. Uedono, K. Tsutsui, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, B. Mizuno, T. Hattori, and H. Iwai, Jpn. J. Appl. Phys. 49, 051301 (2010).
21. A. Uedono, T. Moriya, T. Tsutsui, S. Kimura, N. Oshima, R. Suzuki, S. Ishibashi, H. Matsui, M. Narushima, Y. Ishikawa, M. Graf, and K. Yamashita, Jpn. J. Appl. Phys. 51, 111801 (2012).
22. A. Uedono, Y. K. Cho, S. Tanigawa, and A. Ikari, J. Appl. Phys. 33, 1 (1994).
23. I. D. Wolf, Semicond. Sci. Technol. 11, 139 (1996).
24. J. Chen, M. Chan, and I. D. Wolf, Electronics Packaging Technology Conf., 2000, p. 159.
25. X. Wu, J. Yu, T. Ren, and L. Liu, Microelectron. J. 38, 87 (2007).
26. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, Berlin, 1999) Solid-State Sciences, Vol. 127.
27. H. S. Leipner, V. V. Mikhnovich, Jr., V. Bondarenko, Z. Wang, H. Gu, R. Krause-Rehberg, J. L. Demenet, and J. Rabier, Physica B 340-342, 617 (2003).
28. A. Kawasuso and M. Hasegawa, Materia Japan 35, 130 (1996) [in Japanese].