Novel through silicon vias leakage current evaluation using infrared-optical beam irradiation

Japanese Journal of Applied Physics

Volumn 51, Issue 5 PART 2, 2012, Pages

  Mizushima, Yoriko ^a,b   Kitada, Hideki ^a,b   Koshikawa, Kazushige ^c   Suzuki, Shinsuke ^c   Nakamura, Tomoji ^a   Ohba, Takayuki ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM IRRADIATION; IMAGE MAPS; METALLIZATION PROCESS; NON DESTRUCTIVE; POINT DETECTION; RESISTANCE CHANGE; SI SUBSTRATES; THREE DIMENSIONAL INTEGRATED CIRCUITS; THROUGH SILICON VIAS;

ELECTRIC RESISTANCE; METALLIZING; THREE DIMENSIONAL;

LEAKAGE CURRENTS;

EID: 84861508695     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.05EE03     Document Type: Conference Paper

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