SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 5 PART 2, 2011, Pages

Diffusion resistance of low temperature chemical vapor deposition dielectrics for multiple through silicon vias on bumpless wafer-on-wafer technology

(7) Kitada, Hideki a Maeda, Nobuhide b Fujimoto, Koji c Mizushima, Yoriko a Nakata, Yoshihiro a Nakamura, Tomoji a Ohba, Takayuki b

a FUJITSU LABORATORIES LTD (Japan)

b UNIVERSITY OF TOKYO (Japan)

c DAI NIPPON PRINTING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER FILMS; BULK VALUE; CRITICAL DENSITY; CU DIFFUSION; DIFFUSION BEHAVIOR; DIFFUSION RESISTANCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESISTANCES; FILM DENSITY; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; PROCESS TEMPERATURE; SI SUBSTRATES; SILICON OXYNITRIDES; SION FILM; THROUGH SILICON VIAS;

CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; NITRIDES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957438847 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.05ED02 Document Type: Article

Times cited : (24)

References (12)

1
- 63149189577
- A. Jourdain, S. Stoukatch, P. De Moor, W. Ruythooren, S. Pargfrieder, B. Swinnen, and E. Beyne: Proc. IITC, 2007, p. 207.
- (2007) Proc. IITC , pp. 207
- Jourdain, A.¹ Stoukatch, S.² De Moor, P.³ Ruythooren, W.⁴ Pargfrieder, S.⁵ Swinnen, B.⁶ Beyne, E.⁷

2
- 70349468264
- F. Liu, R. R. Yu, A. M. Young, J. P. Doyle, X. Wang, L. Shi, K.-N. Chen, X. Li, D. A. Dipaola, D. Brown, C. T. Ryan, J. A. Hagan, K. H. Wong, M. Lu, X. Gu, N. R. Klymko, E. D. Perfecto, A. G. Merryman, K. A. Kelly, S. Purushothaman, S. J. Koester, R. Wisnieff, and W. Haensch: IEDM Tech. Dig., 2008, p. 599.
- (2008) IEDM Tech. Dig. , pp. 599
- Liu, F.¹ Yu, R.R.² Young, A.M.³ Doyle, J.P.⁴ Wang, X.⁵ Shi, L.⁶ Chen, K.-N.⁷ Li, X.⁸ Dipaola, D.A.⁹ Brown, D.¹⁰ Ryan, C.T.¹¹ Hagan, J.A.¹² Wong, K.H.¹³ Lu, M.¹⁴ Gu, X.¹⁵ Klymko, N.R.¹⁶ Perfecto, E.D.¹⁷ Merryman, A.G.¹⁸ Kelly, K.A.¹⁹ Purushothaman, S.²⁰ more..

3
- 79957519269
- N. Miyakawa: Proc. ASP-DAC, 2009, p. 416.
- (2009) Proc. ASP-DAC , pp. 416
- Miyakawa, N.¹

4
- 70349471494
- N. Maeda, H. Kitada, K. Fujimoto, K. Suzuki, T. Nakamura, and T. Ohba: Proc. Advanced Metallization Conf., 2008, p. 91.
- (2008) Proc. Advanced Metallization Conf. , pp. 91
- Maeda, N.¹ Kitada, H.² Fujimoto, K.³ Suzuki, K.⁴ Nakamura, T.⁵ Ohba, T.⁶

5
- 74449088025
- T. Ohba, N. Maeda, H. Kitada, K. Fujimoto, K. Suzuki, T. Nakamura, A. Kawai, and K. Arai: Microelectron. Eng. 87 (2010) 485.
- (2010) Microelectron. Eng. , vol.87 , pp. 485
- Ohba, T.¹ Maeda, N.² Kitada, H.³ Fujimoto, K.⁴ Suzuki, K.⁵ Nakamura, T.⁶ Kawai, A.⁷ Arai, K.⁸

6
- 77953169058
- H. Kitada, N. Maeda, K. Fujimoto, K. Suzuki, A. Kawai, K. Arai, T. Suzuki, T. Nakamura, and T. Ohba: Proc. IITC, 2009, p. 107.
- (2009) Proc. IITC , pp. 107
- Kitada, H.¹ Maeda, N.² Fujimoto, K.³ Suzuki, K.⁴ Kawai, A.⁵ Arai, K.⁶ Suzuki, T.⁷ Nakamura, T.⁸ Ohba, T.⁹

7
- 77952627377
- Y. S. Kim, A. Tsukune, N. Maeda, H. Kitada, A. Kawai, K. Arai, K. Fujimoto, K. Suzuki, Y. Mizushima, T. Nakamura, T. Ohba, T. Futatsugi, and M. Miyajima: IEDM Tech. Dig., 2009, p. 365.
- (2009) IEDM Tech. Dig. , pp. 365
- Kim, Y.S.¹ Tsukune, A.² Maeda, N.³ Kitada, H.⁴ Kawai, A.⁵ Arai, K.⁶ Fujimoto, K.⁷ Suzuki, K.⁸ Mizushima, Y.⁹ Nakamura, T.¹⁰ Ohba, T.¹¹ Futatsugi, T.¹² Miyajima, M.¹³

8
- 77957882524
- N. Maeda, Y. S. Kim, Y. Hikosaka, T. Eshita, H. Kitada, K. Fujimoto, Y. Mizushima, K. Suzuki, T. Nakamura, A. Kawai, K. Arai, and T. Ohba: VLSI Symp., 2010, p. 105.
- (2010) VLSI Symp. , pp. 105
- Maeda, N.¹ Kim, Y.S.² Hikosaka, Y.³ Eshita, T.⁴ Kitada, H.⁵ Fujimoto, K.⁶ Mizushima, Y.⁷ Suzuki, K.⁸ Nakamura, T.⁹ Kawai, A.¹⁰ Arai, K.¹¹ Ohba, T.¹²

9
- 77955215798
- D. Archard, K. Giles, A. Price, S. Burgess, and K. Buchanan: Electronic Components and Technology Conf., 2010, p. 764.
- (2010) Electronic Components and Technology Conf. , pp. 764
- Archard, D.¹ Giles, K.² Price, A.³ Burgess, S.⁴ Buchanan, K.⁵

10
- 62249173701
- M. Puech, J. M. Thevenoud, J. M. Gruffat, N. Launay, N. Arnal, and P. Godinat: Design Test Integration and Packaging of MEMSMOEMS, 2008, p. 109.
- (2008) Design Test Integration and Packaging of MEMSMOEMS , pp. 109
- Puech, M.¹ Thevenoud, J.M.² Gruffat, J.M.³ Launay, N.⁴ Arnal, N.⁵ Godinat, P.⁶

11
- 79957525803
- K. Buchanan, S. Burgess, K. Giles, M. Muggeridge, and H. Zhao: IEEE Int. Conf. 3D System Integration, 2009, p. 1.
- (2009) IEEE Int. Conf. 3D System Integration , pp. 1
- Buchanan, K.¹ Burgess, S.² Giles, K.³ Muggeridge, M.⁴ Zhao, H.⁵

12
- 79957498917
- F. Lärmer and A. Schilp: US Patent 5501893 (1996)
- F. Lärmer and A. Schilp: US Patent 5501893 (1996).

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.