Positron annihilation of defects in silicon deformed at different temperatures

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 617-621

  Leipner, H S ^a   Mikhnovich Jr , V V ^a   Bondarenko, V ^a   Wang, Z ^a,b   Gu, H ^a   Krause Rehberg, R ^a   Demenet, J L ^c   Rabier, J ^c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b WUHAN UNIVERSITY   (China)

^c UNIVERSITÉ DE POITIERS   (France)

Author keywords

Dislocations; Plastic deformation; Silicon; Vacancy clusters

Indexed keywords

AGGLOMERATION; ANNEALING; CRACK INITIATION; CRYSTAL DEFECTS; DECOMPOSITION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; PLASTIC DEFORMATION; POSITRON ANNIHILATION SPECTROSCOPY; PRESSURE MEASUREMENT; STRESS ANALYSIS; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

HIGH-STRESS DEFORMATIONS; ROOM TEMPERATURE; VACANCY CLUSTERS;

SILICON;

EID: 0347316547     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.119     Document Type: Conference Paper

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