Novel silicon surface passivation by Al2O3/ZnO/ Al2O3 films deposited by thermal atomic layer deposition

Japanese Journal of Applied Physics

Volumn 53, Issue 4 SPEC. ISSUE, 2014, Pages

  Jeong, Kwang Seok ^a   Oh, Sung Kwen ^a   Shin, Hong Sik ^a   Yun, Ho Jin ^a   Kim, Seong Hyeon ^a   Lee, Ho Ryeong ^a   Han, Kyu Min ^b   Park, Ho Yun ^b   Lee, Hi Deok ^a   Lee, Ga Won ^a  

^a Chungnam National University   (South Korea)

^b Solar Team DMS   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; PASSIVATION; QUANTUM WELL LASERS; SILICON; ZINC; ZINC OXIDE;

C-SI SOLAR CELL; EFFECTIVE-LIFETIME MEASUREMENTS; FIXED OXIDE CHARGES; PASSIVATION LAYER; PHYSICAL ANALYSIS; RECOMBINATION LOSS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILICON SURFACES;

ALUMINUM;

EID: 84903312862     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.04ER19     Document Type: Conference Paper

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