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Volumn 308-310, Issue , 2001, Pages 912-915
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First-principles study of the compensation mechanism in N-doped ZnO
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Author keywords
Compensation; Nitrogen; ZnO
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRONIC STRUCTURE;
NITROGEN;
SEMICONDUCTOR DOPING;
PLASMA GAS;
ZINC OXIDE;
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EID: 0035669171
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(01)00838-9 Document Type: Article |
Times cited : (56)
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References (15)
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