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Volumn 308-310, Issue , 2001, Pages 912-915

First-principles study of the compensation mechanism in N-doped ZnO

Author keywords

Compensation; Nitrogen; ZnO

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; NITROGEN; SEMICONDUCTOR DOPING;

EID: 0035669171     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00838-9     Document Type: Article
Times cited : (56)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.