Luminescence from zinc oxide nanostructures and polymers and their hybrid devices

Materials

Volumn 3, Issue 4, 2010, Pages 2643-2667

  Willander, Magnus ^a   Nur, Omer ^a   Sadaf, Jamil Rana ^a   Qadir, Muhammad Israr ^a   Zaman, Saima ^a   Zainelabdin, Ahmed ^a   Bano, Nargis ^a   Hussain, Ijaz ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Deep center luminescence; Hybrid technology; Light emitting diodes; ZnO nanostructures

Indexed keywords

DEEP CENTERS; DEEP LEVEL CENTERS; ELECTRO-OPTICAL CHARACTERISTICS; HYBRID TECHNOLOGY; LUMINESCENT MATERIAL; WHITE LIGHT EMITTING DIODES; ZINC OXIDE NANOSTRUCTURES; ZNO NANOSTRUCTURES;

HETEROJUNCTIONS; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; NANORODS; SILICON CARBIDE; ZINC OXIDE;

POLYMERS;

EID: 78650699162     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma3042643     Document Type: Article

References (84)

1. Bunn, C.W. The lattice dimensions of zinc oxide. Proc. Phys. Soc. London 1935, 47, 835-842.
2. Willander, M.; Nur, O.; Zhao, Q.X.; Yang, L.L.; Lorenz, M.; Cao, B.Q.; Zuniga Perez, J.; Czekalla, C.; Zimmermann, G.; Grundmann, M.; Bakin, A.; Behrends, A.; Al-Suleiman, M.; Al-Shaer, A.; Che Mofor, A., Postels, B.; Waag, A.; Boukos, N.; Travlos, A.; Kwack, H.S.; Guinard, J.; Le Si Dang, D. Topical review: Zinc oxide nanorods based photonic devices: Recent progress in growth, light emitting diodes and lasers. Nanotechnology 2009, 20, 332001.
3. Ahn, H.A.; Kim, Y.Y.; Kim, D.C.; Mohanta, S.K.; Cho, H.K. A comparative analysis of deep level emission in ZnO layers deposited by various methods. J. Appl. Phys. 2009, 105, 013502.
4. Liu, W.; Gu, L.S.; Ye, D.L.; Zhu, S.M.; Liu, S.M.; Zhou, X.; Zhang, R.; Shi, Y.; Hang, Y.; Zhang, C.L. Blue-yellow ZnO homo-structural light emitting diode realized by metal organic chemical vapour deposition technique. Appl. Phys Lett. 2006, 88, 092101.
5. Gao, P.X.; Ding, Y.; Wang, Z.L. Crystallographic orientation aligned ZnO nanorods grown by Tin catalyst. Nano. Lett. 2003, 3, 1315-1320.
6. Klingshirn, C. Review article: ZnO: From basics towards applications. Phys. Stat. Sol. B 2007, 244, 3027-3073.
7. Klingshirn, C.; Mollwo, E. Light scattering experiments with heavily Li-doped ZnO crystal. Zeitschrift fur Physik A 1972, 254, 437-446.
8. Lander, J.J. Reactions of Lithium as a donor and an acceptor in ZnO. J. Phys. Chem. 1960, 15, 324-334.
9. Zwingel, D. Trapping and recombination processes in the thermoluminscence of Li-doped ZnO single crystal. J. Lumin. 1972, 5, 385-405.
10. Look, D.C.; Claflin, B. P-type doping and devices based on ZnO. Phys. Stat. Sol. B 2004, 241, 624-630.
11. Özgür, Ü.; Alivov, Ya. I.; Liu, C.; Teke, A.; Reshchikov, M.A.; Dogan, S.; Avrutin, A.; Cho, S-J.; Morkoç, H. A comprehensive review of ZnO materials and devices. J. Appl. Phys. 2005, 98, 041301-103.
12. Gao, P.X.; Wang, Z.L. High-yield synthesis of single crystal nano-springs of ZnO. Small 2005, 1, 945-949.
13. Fuller, M.L. Twinning in zinc oxide. J. Appl. Phys. 1944, 15, 164-170.
14. Janotti, A.; van de Walle, C.G. Native point defects in ZnO. Phys. Rev. B 2007, 76, 165202-165222.
15. van de Walle, C.G.; Neugebauer, J. First principle calculations for defects and impurities: applications to III-nitrides. J. Appl. Phys. 2004, 95, 3851-3879.
16. Mooney, P.M. Identification of Defects in Semiconductors in Semiconductors and Semimetals; Academic press: San Diego, CA, USA, 1999; Volume 51B, pp. 93-152.
17. Look, D.C.; Hemsky, J.W.; Sizelove, J.R. Residual native shallow donors in ZnO. Phys. Rev. Lett. 1999, 82, 2552-2555.
18. Kröger, F.A. The Chemistry of Imperfect Crystals; North Holland press: Amsterdam, The Netherland, 1964.
19. Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C. Introduction and recovery of point defects in electron irradiated ZnO. Phys. Rev. B 2005, 72, 085206-085211.
20. Tuomisto, F.; Saarinen, K.; Look, D.C. Irradiation induced defects in ZnO studied by positron annihilation spectroscopy. Phys. Stat. Sol. C 2004, 201, 2219-2224.
21. Look, D.C.; Farlow, G.C.; Reunchan, P.; Limpijumnong, S.; Zhang, S.B.; Nordlund, K. Evidence of native defect donors in n-type ZnO. Phys. Rev. Lett. 2005, 95, 225502.
22. Kröger, F.A.; Vink, H.J. The origin of florescence in sled activated ZnS, CdS, and ZnO. J. Chem. Phys. 1954, 22, 250-252.
23. Kohan, A.F.; Ceder, G.; Morgan, D.; van de Walle, C.G. First principles study of native point defects in ZnO. Phys. Rev. B 2000, 22, 15019-15027.
24. Oba, F.; Nishitani, S.R.; Isotani, S.; Adachi, H.; Tanaka, I. Energetics of native point defects in ZnO. J. Appl. Phys. 2001, 90, 824-828.
25. van de Walle, C.G. Hydrogen as a doping cause n ZnO. Phys. Rev. Lett. 2000, 85, 1012-1015.
26. Reynolds, D.C.; Look, D.C.; Jogai, B.; Morkoc, H. Similarities in the band edge and deep-center photoluminescence mechanisms in GaN and ZnO. Sol. Stat. Comm. 1997, 101, 643-646.
27. Liu, M.; Kiati, A.H.; Mascher, P. Point defects and luminescence centers in ZnO and ZnO doped with manganese. J. Lumin. 1992, 54, 35-42.
28. Bylander, E.G. Surface effects on low energy cathodoluminescence of ZnO. J. Appl. Phys. 1978, 49, 1188-1195.
29. Kassai, P.H. Electron spin resonance studies of donors in ZnO. Phys. Rev. 1963, 130, 989-995.
30. Studenikin, A.; Golego, N.; Cocivera, M. Fabrication of green and orange photoluminescence, undoped ZnO films by spray pyrolsis. J. Appl. Phys. 1998, 84, 2287-2294.
31. Yamauchi, S.; Goto, Y.; Hariu, T. Photoluminescence studies of un-doped and nitrogen-doped ZnO layers grown by plasma assisted epitaxy. J. Cryst. Growth 2004, 260, 1-6.
32. Zhao, Q.X.; Klason, P.; Willander, M.; Zhong, H.M.; Lu, W., Yang, J.H. Deep level emissions influence by O and Zn implantation. Appl. Phys. Lett. 2005, 87, 211912:1-211912:3.
33. Børseth, T.M.; Svensson, B.G.; Kuznetsov A.Y.; Klason, P.; Zhao, Q.X.; Willander, M. Identification of zinc and oxygen vacancy optical signals in ZnO. Appl. Phys. Lett. 2006, 89, 262112.
34. Klason, P.; Børseth, T.M.; Zhao, Q.X.; Svensson, B.G.; Kuznetsov, A.Y.; Willander, M. Temperature dependence and decay times of zinc and oxygen vacancies related photoluminescence in ZnO. Sol. Stat. Commun. 2008, 145, 321-326.
35. Schirmer, O.F.; Zwingel, D. The yellow luminescence of ZnO. Sol. Stat. Commun. 1970, 8, 1559-1563.
36. Liu, M.; Kitai, A.H.; Mascher, P. Point defects and luminescence centers in zinc oxide and zinc oxide doped with manganese. J. Lumin. 1992, 54, 35-42.
37. Wu, X.L.; Siu, G.G.; Fu, C.L.; Ong, H.C. Photoluminescence and cathodoluminescence studies of stochiometric and oxygen deficiency in ZnO. Appl. Phys. Lett. 2001, 78, 2285-2287.
38. Li, D.; Leung, Y.H.; Djurisic, A.B.; Liu, Z.T.; Xie, M.H.; Shi, S.L.; Xu, S.J. Different origin of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods. Appl. Phys. Lett. 2004, 85, 1601-1603.
39. Tam, K.H.; Cheung, C.K.; Leung, Y.H.; Djurisic, A.B.; Ling, C.C.; Beling, C.D.; Fung, S.; Kwok, W.M.; Phillips, D.L.; Ding, L.; Ge, W.K. Defects in ZnO prepared by the hydrothermal method. J. Phys. Chem. 2006, 110, 20865-20871.
40. Greene, L.E.; Law, M.; Goldberger, J.; Kim, F.; Johnson, J.; Zhang, Y.; Saykally, R.J.; Yang, P. Low temperature wafer-scale production of ZnO nanowires arrays. Angew. Chem. Int. Ed. 2003, 42, 3031-3034.
41. Gomi, M.; Oohira, N.; Ozaki, K.; Koyano, M. Photoluminescence and structural properties of precipitated ZnO fine particles. Jpn. J. Appl. Phys. 2003, 42, 481-485.
42. Djurisic, A.B.; Leung, Y.H.; Tam, K.H.; Hsu, Y.F.; Ding, L.; Ge, W.K.; Zhong, C.; Wong, K.S.; Chan, W.K.; Tam, H.L.; Cheah, K.W.; Kwok, W.M.; Phillips, D.L. Defect emissions in ZnO nanostructures. Nanotechnology 2007, 18, 095702.
43. Lima, S.A.M.; Sigoli, F.A.; Jafelicci, M.; Davolos, M.R. Luminescent properties of lattice defect correlation in zinc oxide. Int. J. Inorg. Mater. 2001, 3, 749-754.
44. Nikitenko, V. Optical and Spectroscopy of Point Defects in Zinc Oxide; Springer: Dordrecht, The Netherland, 2005; p. 69.
45. Allen, M.W.; Durbin, S.M. Influence of the oxygen vacancies on Schottky contacts to ZnO. Appl. Phys. Lett. 2008, 92, 12110.
46. Quan, D.T.; Hbib, H. High barrier height Au/InP Schottky contact with POXNYHZ interfacial layer. Solid State Electron 1993, 36, 339-344.
47. Ye, J.D.; Gu, S.L.; Zhu, S.M.; Liu, W.; Liu, S.M.; Zhang, R.; Shi, Y.; Zheng, Y.D. Blue yellow homo-structural light emitting diodes realized by metal organic chemical vapour deposition technique. Appl. Phys. Lett. 2006, 88, 182112.
48. Reddy, N.K.; Ahsanulhaq, Q.; Kim, J.H.; Hahn, Y.B. Well aligned ZnO for devices: Synthesis and characterization of ZnO nanorods and n-ZnO/p-Si heterojunction diodes. Europhys. Lett. 2008, 81, 3800.
49. Chen, D.X.; Ling, C.C.; Fung, S.; Beling, C.D.; Mei, Y.F.; Fu, R.K.F.; Siu, G.G.; Chu, Paul K. Current transport studies of n-ZnO/p-Si heterostructures grown by plasma emission ion implantation deposition. Appl. Phys. Lett. 2006, 88, 132104.
50. Lampert, M.A.; Mark, P. Current Injection in Solids; Academic press: New York, NY, USA, 1970; p. 59.
51. Mott, N.F.; Gurney, R.W. Electronic Processes in Ionic Crystals; Oxford University press: Oxford, England, 1940; p. 141.
52. Bylander, E.G. Surface effects on the low energy cathodoluminescence of ZnO. J. Appl. Phys. 1978, 49, 1188-1195.
53. Zeng, H.; Li, Z.; Cai, W.; Liu, P. Strong localization effect in temperature dependence of violet blue shift emission from ZnO nano-shell. J. Appl. Phys. 2007, 102, 104307.
54. Djurisic, A.B.; Leung, Y.H.; Tam, K.H.; Ding, L.; Ge, W.K.; Chen H.Y.; Gwo, S. Green yellow and orange defect emission from ZnO nanostructures: Influence of excitation wavelength. Appl. Phys. Lett. 2006, 88, 103107.
55. Leiter, F.; Alves, H.; Pfisterer, D.; Romanov, N.G.; Hofmann, D.M.; Meyer, B.K. Oxygen vacancies in ZnO. Physica B 2003, 340, 201-204.
56. Lin, B.; Fu, Z.; Jia, Y. Green luminescence centers in un-doped ZnO film deposited on Silicon substrate. Appl. Phys. Lett. 2001, 79, 943-945.
57. Djurisic, A.B.; Leung, Y.H. Optical properties of ZnO nanostructures. Small 2006, 2, 944-961.
58. Xu, P.S.; Sun, Y.M.; Shi, C.S.; Xu, F.Q.; Pan, H.B. The electronic structure and spectral properties of ZnO and its defects. Nucl. Instrum. Methods B 2003, 199, 286-290.
59. Mattila, J.; Nieminen, R.M. Point defects complexes and broad band luminescence in GaN and AlN. Phys. Rev. B 1997, 55, 9571-9576.
60. Everhart, T.E.; Hoff, P.H. Determination of kilovolt electron energy dissipation. J. Appl. Phys. 1971, 42, 5837-5846.
61. Kanaya, K.; Okayama, S. Penetration and energy loss of electrons in solids. J. Phys. D 1972, 5, 43-58.
62. Dierre, B.; Yuan, X.L.; Ohashi, N.; Sekiguchi, T. Effect of specimen preparation on the cathodoluminescence properties of ZnO nano-particles. J. Appl. Phys. 2008, 103, 083551.
63. Yoshikawa, H.; Adachi, S. Jpn. J. Appl. Phys. 1997, 36, 6237.
64. Zhiyan, X.; Morihro, O.; Masayoshi, I.; Tadashi, I.; Gui, H.; Yoichiro, N.; Toru, A.; Hidenori, M. Cathodoluminescence properties of tower like ZnO prepared by thermal oxidation. J. Surf. Sci. Nanotech. 2009, 7, 358-361.
65. Young, M.O.; Kyung, M.L.; Kyung, P.H.; Yongsun, K.; Ahn, Y.H.; Ji-Yong, P.; Soonil, L. Correlating luminescence from individual ZnO nanostructures by electronic transport characteristics. Nano Lett. 2007, 7, 3681-3685.
66. Chien-Lin, K.; Ruey-Chi, W.; Jow-Lay, H.; Chuan-Pu, L.; Yi-Feng, L.; Cheng-Yu, W.; Hung-Chin, C. ZnO with two spatially distinct light emissions. Nanotechnology 2008, 19, 285703.
67. Vanheusden, K.; Seager, C.H.; Warren, W.L.; Tallant, D.R.; Voigt, J.A. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors. Appl. Phys. Lett. 1996, 15, 403-405.
68. Israr, M.Q.; Sadaf, J.R.; Yang, L.L.; Nur, O.; Willander, M.; Palisaitis, J.; Persson, P.O.Å. Trimming of aqueous chemically grown ZnO nanotubes and their comparative optical properties. Appl. Phys. Lett. 2009, 95, 073114.
69. Vayssieres, L.; Keis, K.; Hagfeldt, A.; Lindquist, S.E. Three dimensional array of highly oriented ZnO micro-tubes. Chem. Mater. 2001, 13, 4395-4398.
70. Fang, Z.; Wang, Y.; Xu, D.; Tan, Y.; Liu, S. Blue luminescent centers in ZnO deposited on Si substrates. Optical Mater. 2004, 26, 239-242.
71. Alivov, Y.I.; van Nordstrand, J.E.; Look, D.C.; Chukichev, M.V.; Ateav, B.M. Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes. Appl. Phys. Lett. 2003, 83, 2943-2945.
72. Reshchikov, M.A.; Yi, G.-C.; Wessels, B.W. Behavior of 2.8-and 3.2 eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities. Phys. Rev. B 1999, 59, 13176-13183.
73. Nadarajah, A.; Word, R.C.; Meiss, J.; Knenkamp, R. Flexible inorganic nanowires light emitting diode. Nano Lett. 2008, 8, 534-537.
74. Zhang, T.; Xu, Z.; Qian, L.; Tao, D.L.; Teng, F.; Xu, X.R. Influence of ZnO nanorods on the luminescence properties of the fluorescent dye-doped polymer nano-composite. Opt. Mater. 2006, 29, 216-219.
75. Wadeasa, A.; Beegum, S.L.; Raja, S.; Nur, O.; Willander, M. The demonstration of hybrid n-ZnO nanorod/p-polymer heterojunction light emitting diodes on glass substrate. Appl. Phys. A-Mat. Sci. Process. 2009, 95, 807-812.
76. Wadeasa, A.; Nur, O.; Willander, M. The effect of the interlayer design on the electroluminescence and electrical properties of n-ZnO/p-type blended polymer hybrid light emitting diodes. Nanotechnology 2009, 20, 065710.
77. Huang, Z.; Xu, Z.; Zhao, S.; Li, Y.; Zhang, F.; Song, L.; Wang, Y.; Xu, X. Organic-inorganic hetero-structure for enhanced electroluminescence. Solid State Commun. 2007, 142, 417-420.
78. Willander, M.; Nur, O.; Bano, N.; Sultana, K. Zinc oxide nanorods-based heterostructures on solid and soft substrates for white light emitting diodes applications. New J. Phys. 2009, 11, 125020.
79. Wagner, R.S.; Ellis, W.C. Vapour liquid solid mechanism of single crystal growth. Appl. Phys. Lett. 1964, 4, 89-90.
80. Huang, M.H.; Wu, Y.Y.; Feick, H.; Tran, H.; Weber, E.; Yang, P.D. Catalytic growth of ZnO nanowires by vapour transport. Adv. Mater. 2001, 13, 113-116.
81. Zhao, Q.X.; Klason, P.; Willander, M. Growth of ZnO nanostructure by vapour liquid solid method. Appl. Phys. A 2007, 88, 27-30.
82. Vayssieres, L.; Kies, K.; Lindquist, S.-E.; Hagfeldt, A. Purpose built anisotropic metal oxide material: 3D highly oriented microrod arrays of ZnO. J. Phys. Chem. B 2001, 105, 3350-3352.
83. Yang, L.L.; Zhao, Q.X.; Willander, M.; Jang, J.H. Effective way to control the size of well aligned ZnO nanorods with two step chemical path deposition. J. Crys. Grow. 2009, 311, 1046-1050.
84. Yang, L.L.; Zhao, Q.X.; Willander, M.; Jang, J.H.; Ivanov, I. Annealing effects on optical properties of low temperature grown ZnO nanorods. J. Appl. Phys. 2009, 105, 053503.