Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 317-323

  Lenkeit, B ^a   Steckemetz, S ^a   Artuso, F ^a   Hezel, R ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COST EFFECTIVENESS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SCREEN PRINTING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; THERMODYNAMIC STABILITY;

BIFACIAL SILICON SOLAR CELLS; ELECTRONIC SURFACE PASSIVATION; FLOAT ZONE; REMOTE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SURFACE RECOMBINATION VELOCITY;

SILICON SOLAR CELLS;

EID: 0035194556     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00108-2     Document Type: Article

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