Interrelation between chemical, electronic, and charge transport properties of solution-processed indium-zinc oxide semiconductor thin films

Journal of Physical Chemistry C

Volumn 118, Issue 24, 2014, Pages 12826-12836

  Häming, Marc ^a,b,c   Issanin, Alexander ^b   Walker, Daniel ^a,b   Von Seggern, Heinz ^b   Jägermann, Wolfram ^b   Bonrad, Klaus ^a,b  

^a MERCK KGAA   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER TRANSPORT; ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; METALS; MOS DEVICES; OXIDE FILMS; OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

FIELD-EFFECT MOBILITIES; METAL OXIDE SEMICONDUCTOR; PRECURSOR CONVERSION; PREPARATION CONDITIONS; SEMICONDUCTOR THIN FILMS; SYSTEMATIC VARIATION; THIN FILM TRANSISTORS (TFTS); VALENCE BAND SPECTRA;

FILM PREPARATION;

EID: 84903153856     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp501956z     Document Type: Article

References (65)

1. Park, J.-S.; Kim, T.-W.; Stryakhilev, D.; Lee, J.-S.; An, S.-G.; Pyo, Y.-S.; Lee, D.-B.; Mo, Y.-G.; Jin, D.-U.; Chung, H. K. Flexible Full Color Organic Light-Emitting Diode Display on Polyimide Plastic Substrate driven by Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Appl. Phys. Lett. 2009, 95, 013503
2. Ginley, D. S.; Paine, D. C.; Hosono, H. Handbook of Transparent Conductors; Springer: Heidelberg, Germany, 2011.
3. Fortunato, E.; Barquinha, P.; Pimentel, A.; Goncalves, A.; Marques, A.; Pereira, L.; Martins, R. Recent Advances in ZnO Transparent Thin Film Transistors Thin Solid Films 2005, 487, 205-211
4. Jagadish, C.; Pearton, S. Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications; Elsevier: Oxford, U.K., 2006.
5. Wöll, C. The Chemistry and Physics of Zinc Oxide Surfaces Prog. Surf. Sci. 2007, 82, 55-120
6. Minami, T. Transparent Conducting Oxide Semiconductors for Transparent Electrodes Semicond. Sci. Technol. 2005, 20, S35-S44
7. Özgür, Ü.; Alivov, Y. I.; Liu, C.; Teke, A.; Reshchikov, M. A.; Dogan, S.; Avrutin, V.; Cho, S.-J.; Morkoc, H. A Comprehensive Review of ZnO Materials and Devices Appl. Phys. 2005, 98, 041301
8. Hosono, H. Recent Progress in Transparent Oxide Semiconductors: Materials and Device Application Thin Solid Films 2007, 515, 6000-6014
9. Hosono, H. Ionic Amorphous Oxide Semiconductors: Material Design, Carrier Transport, and Device Application J. Non-Cryst. Solids 2006, 352, 851-858
10. Krebs, F. C.; Espinosa, N.; Hösel, M.; Sondergaard, R. R.; Jorgensen, M. 25th Anniversary Article: Rise to Power - OPV-Based Solar Parks Adv. Mater. 2014, 26, 29-39
11. Street, R. A.; Wong, W. S.; Ready, S. E.; Chabinyc, M. L.; Arias, A. C.; Limb, S.; Salleo, A.; Lujan, R. Jet Printing Flexible Displays Mater. Today 2006, 9, 32-37
12. Klauk, H. Organic Thin-Film Transistors Chem. Soc. Rev. 2010, 39, 2643-2666
13. Katz, H. E. Recent Advances in Semiconductor Performance and Printing Processes for Organic Transistor-Based Electronics Chem. Mater. 2004, 16, 4748-4756
14. Horowitz, G. Organic Thin Film Transistors: From Theory to Real Devices J. Mater. Res. 2004, 19, 1946-1962
15. De Gans, B.-J.; Duineveld, P. C.; Schubert, U. S. Inkjet Printing of Polymers: State of the Art and Future Developments Adv. Mater. 2004, 16, 203-213
16. Rouhi, N.; Jain, D.; Burke, P. J. High-Performance Semiconducting Nanotube Inks: Progress and Prospects ACS Nano 2011, 5, 8471-8487
17. Hoffmann, R. C.; Dilfer, S.; Issanin, A.; Schneider, J. J. Solution processed ZnO-Challenges in Processing and Performance on Flexible Substrates Phys. Status Solidi A 2010, 207, 1590-1595
18. Lee, D.-H.; Chang, Y.-J.; Herman, G. S.; Chang, C.-H. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors Adv. Mater. 2007, 19, 843-847
19. Kim, Y.-H.; Heo, J.-S.; Kim, T.-H.; Park, S.; Yoon, M.-H.; Kim, J.; Oh, M. S.; Yi, G.-R.; Noh, Y.-Y.; Park, S. K. Flexible Metal-Oxide Devices made by Room-Temperature Photochemical Activation of Sol-Gel Films Nature 2012, 489, 128-132
20. Jeong, S.; Jeong, Y.; Moon, J. Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film Transistors J. Phys. Chem. C 2008, 112, 11082-11085
21. Schneider, J. J.; Hoffmann, R. C.; Engstler, J.; Soffke, O.; Jaegermann, W.; Issanin, A.; Klyszcz, A. A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material Adv. Mater. 2008, 20, 3383-3387
22. Walker, D. E.; Major, M.; Baghaie, Y. M.; Klyszcz, A.; Häming, M.; Bonrad, K.; Melzer, C.; Donner, W.; von Seggern, H. High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering ACS Appl. Mater. Interfaces 2012, 4, 6834-6840
23. Banger, K. K.; Yamashita, Y.; Mori, K.; Peterson, R. L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Low-Temperature, High-Performance Solution-Processed Metal Oxide Thin-Film Transistors Formed by a Sol-Gel on Chip Process Nat. Mater. 2011, 10, 45
24. Hennek, J. W.; Kim, M.-G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. Exploratory Combustion Synthesis: Amorphous Indium Yttrium Oxide for Thin-Film Transistors J. Am. Chem. Soc. 2012, 134, 9593-9596
25. Kim, M.-G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. Low-Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing Nat. Mater. 2011, 10, 382-388
26. Torrisi, F.; Hasan, T.; Wu, W.; Sun, Z.; Lombardo, A.; Kulmala, T. S.; Hsieh, G. W.; Jung, S.; Bonaccorso, F.; Paul, J. P. Inkjet-Printed Graphene Electronics ACS Nano 2012, 6, 2992-3006
27. Ishikawa, F. N.; Chang, H.-K.; Ryu, K.; Chen, P.-C.; Badmaev, A.; De Arco, L. G.; Shen, G.; Zhou, C. Transparent Electronics Based on Transfer Printed Aligned Carbon Nanotubes on Rigid and Flexible Substrates ACS Nano 2009, 3, 73-79
28. Ha, M.; Xia, Y.; Green, A. A.; Zhang, W.; Renn, M. J.; Kim, C. H.; Hersam, M. C.; Frisbie, C. D. Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks ACS Nano 2010, 4, 4388-4395
29. Dasgupta, S.; Kruk, R.; Mechau, N.; Hahn, H. Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature ACS Nano 2011, 5, 9628-9638
30. Weitz, R. T.; Amsharov, K.; Zschieschang, U.; Barrena Villas, E.; Goswami, D. K.; Burghard, M.; Dosch, H.; Jansen, M.; Kern, K.; Klauk, H. Organic N-Channel Transistors Based on Core-Cyanated Perylene Carboxylic Diimide Derivatives J. Am. Chem. Soc. 2008, 130, 4637-4645
31. Kikuchi, Y.; Nomura, K.; Yanagi, H.; Kamiya, T.; Hirano, M.; Hosono, H. Device Characteristics Improvement of a-In-Ga-Zn-O TFTs by Low-Temperature Annealing Thin Solid Films 2010, 518, 3017-3021
32. Chiang, H. Q.; Wager, J. F.; Hoffman, R. L.; Jeong, J.; Keszler, D. A. High Mobility Transparent Thin-Film Transistors with Amorphous Zinc Tin Oxide Channel Layer Appl. Phys. Lett. 2005, 86, 013503
33. Fortunato, E. M. C.; Pereira, L. M. N.; Barquinha, P. M. C.; Botelho do Rego, A. M.; Gonçalves, G.; Vilà, A.; Morante, J. R.; Martins, R. F. P. High Mobility Indium Free Amorphous Oxide Thin Film Transistors Appl. Phys. Lett. 2008, 92, 222103
34. Lee, D.-J.; Kwon, J.-Y.; Kim, J.; Kim, K.-J.; Cho, Y.-H.; Cho, S.-Y.; Kim, S.-H.; Xu, J.; Kim, K.-B. Ultrasmooth, High Electron Mobility Amorphous In-Zn-O Films Grown by Atomic Layer Deposition J. Phys. Chem. C 2014, 118, 408-415
35. Ashcroft, N. W.; Mermin, N. D. Solid State Physics, 3 rd ed.; Brooks Cole: Stamford, CT, 2007.
36. Hofmann, P. Solid State Physics: An Introduction; Wiley-VCH: Weinheim, Germany, 2008.
37. Sze, S. M. Physics of Semiconductor Devices, 3 rd ed.; Wiley-Interscience: Hoboken, NJ, 2007.
38. Häming, M.; Scheuermann, C.; Schöll, A.; Reinert, F.; Umbach, E. Coverage Dependent Organic-Metal Interaction Studied by High-Resolution Core Level Spectroscopy: SnPc (sub)monolayers on Ag(111) J. Electron Spectrosc. Relat. Phenom. 2009, 174, 59-64
39. Hüfner, S. Photoelectron Spectroscopy; Springer: Heidelberg, Germany, 2003.
40. Häming, M.; Greif, M.; Sauer, C.; Schöll, A.; Reinert, F. Electronic Structure of Ultrathin Heteromolecular Organic-Metal Interfaces: SnPc/PTCDA/Ag(111) and SnPc/Ag(111) Phys. Rev. B 2010, 82, 235432
41. Häming, M.; Greif, M.; Wießner, M.; Schöll, A.; Reinert, F. Characterization of Ultra-Thin Organic Hetero-Interfaces-SnPc/PTCDA/Ag(111) Surf. Sci. 2010, 604, 1619
42. Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bomben, K. D. Handbook of X-ray Photoelectron Spectroscopy; Perkin-Elmer, Eden Prairie, MN, 1992.
43. Krause, S.; Casu, M. B.; Schöll, A.; Umbach, E. Determination of Transport Levels of Organic Semiconductors by UPS and IPS New J. Phys. 2008, 10, 085001
44. Ueno, N.; Kera, S. Electron Spectroscopy of Functional Organic Thin Films: Deep Insights into Valence Electronic Structure in Relation to Charge Transport Property Prog. Surf. Sci. 2008, 83, 490-557
45. Kera, S.; Yamane, H.; Ueno, N. First-Principles Measurements of Charge Mobility in Organic Semiconductors: Valence Hole-Vibration Coupling in Organic Ultrathin Films Prog. Surf. Sci. 2009, 84, 135-154
46. Amy, F.; Chan, C. K.; Zhao, W.; Hyung, J.; Ono, M.; Sueyoshi, T.; Kera, S.; Nesher, G.; Salomon, A.; Segev, L. Radiation Damage to Alkyl Chain Monolayers on Semiconductor Substrates Investigated by Electron Spectroscopy J. Phys. Chem. B 2006, 110, 21826-21832
47. Seitz, O.; Vilan, A.; Cohen, H.; Hwang, J.; Häming, M.; Schöll, A.; Umbach, E.; Kahn, A.; Cahen, D. Doping Molecular Monolayers: Effect on Electrical Transport Through Alkyl Chains on Si Adv. Funct. Mater. 2008, 18, 1-3
48. Nomura, K.; Kamiya, T.; Ikenaga, E.; Yanagi, H.; Kobayashi, K.; Hosono, H. Depth Analysis of Subgap Electronic States in Amorphous Oxide and Semiconductor, a-In-Ga-Zn-O, Studied by Hard X-Ray Photoelectron and Spectroscopy J. Appl. Phys. 2011, 109, 073726
49. Bär, M.; Reichardt, J.; Grimm, A.; Kötschau, I.; Lauermann, K. R.; Sokoll, S.; Weinhardt, L.; Umbach, E.; Heske, C.; Lux-Steiner, M. C. Zn(O,OH) layers in chalcopyrite thin-film solar cells: Valence-Band Maximum versus Composition J. Appl. Phys. 2005, 98, 053702
50. Jung, Y. S.; Seo, J. Y.; Lee, D. W.; Jeon, D. Y.Influence of DC Magnetron Sputtering Parameters on the Properties of Amorphous Indium Zinc Oxide Thin Film Thin Solid Films 2003, 445, 63-71
51. Tsao, S. W.; Chang, T. C.; Huang, S. Y.; Chen, M. C.; Chen, S. C.; Tsai, C. T.; Kuo, Y. J.; Chen, Y. C.; Wu, W. C. Hydrogen-Induced Improvements in Electrical Characteristics of a-IGZO Thin-Film Transistors Solid-State Electron. 2010, 54, 1497-1499
52. Thomson, A. C.; Lindau, I.; Attwood, D.; Liu, Y.; Gullikson, E.; Pianetta, P.; Howells, M.; Robinson, A.; Kim, K.-J.; Scofield, J.; X-ray Data Booklet; Lawrence Berkeley National Laboratory: Berkeley, CA, 2009.
53. Strunskus, T.; Fuchs, O.; Weinhardt, L.; Heske, C.; Guraya, M.; Muhler, M.; Staemmler, V.; Wöll, C. The Valence Electronic Structure of Zinc Oxide Powders as determined by X-ray Emission Spectroscopy: Variation of Electronic Structure with Particle Size J. Electron Spectrosc. Relat. Phenom. 2004, 134, 183-189
54. Wu, Q.-H.; Thissen, A.; Jaegermann, W.; Liu, M. Photoelectron Spectroscopy Study of Oxygen Vacancy on Vanadium Oxides Surface Appl. Surf. Sci. 2004, 236, 473-478
55. Nolan, M.; Elliott, S. D.; Mulley, J. S.; Bennett, R. A.; Basham, M.; Mulheran, P. Electronic Structure of Point Defects in Controlled Self-doping of the TiO2 (110) Surface Phys. Rev. B 2008, 77, 235424
56. Yeh, J. J.; Lindau, I. Atomic Subshell Photoionization Cross Section and Asymmetry Parameters At. Data Nucl. Data Tables 1985, 32, 1-155
57. Ito, N.; Sato, Y.; Song, P. K.; Kaijio, A.; Inoue, K.; Shigesato, Y. Electrical and Optical Properties of Amorphous Indium Zinc Oxide Films Thin Solid Films 2006, 496, 99-103
58. Karasawa, T.; Miyata, Y. Electrical and Optical Properties of Indium Tin Oxide Thin Films deposited on Unheated Substrates by d.c. Reactive Sputtering Thin Solid Films 1993, 223, 135-139
59. Tan, S. T.; Chen, B. J.; Sun, X. W.; Fan, W. J.; Kwok, H. S.; Zhang, X. H.; Chua, S. J. Blueshift of Optical Band Gap in ZnO Thin Films Grown by Metal-Organic Chemical-Vapor Deposition J. Appl. Phys. 2005, 98, 013505
60. 3+ Ions: Formation of Needlelike Particles of Indium Hydroxide Chem. Mater. 2000, 12, 1229-1233
61. Zhou, H.; Cai, W.; Zhang, L. Photoluminescence of Indium-Oxide Nanoparticles Dispersed within Pores of Mesoporous Silica Appl. Phys. Lett. 1999, 75, 495-497
62. Burstein, E. Anomalous Optical Absorption Limit in InSb Phys. Rev. 1954, 93, 632-633
63. Moss, T. S. The Interpretation of the Properties of Indium Antimonide Proc.Phys. Soc. B 1954, 67, 775-782
64. Medvedeva, J. E.; Hettiarachchi, C. L. Tuning the Properties of Complex Transparent Conducting Oxides: Role of Crystal Symmetry, Chemical Composition, and Carrier Generation Phys. Rev. B 2010, 81, 125116
65. Kim, H.; Gilmore, C. M.; Pique, A.; Horwitz, J. S.; Mattoussi, H.; Murata, H.; Kafafi, Z. H.; Chrisey, D. B. Electrical, Optical, and Structural Properties of Indium-Tin-Oxide Thin Films for Organic Light-Emitting Devices J. Appl. Phys. 1999, 86, 6451-6461