Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition

Materials Research Bulletin

Volumn 57, Issue , 2014, Pages 47-51

  Naouar, M ^a,c   Ka, I ^a   Gaidi, M ^b   Alawadhi, H ^b   Bessais, B ^c   El Khakani, M A ^a  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

^b UNIVERSITY OF SHARJAH   (United Arab Emirates)

^c RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

Author keywords

A. Structural materials; A. Thin films; B. Laser deposition; B. Optical properties; C. X ray diffraction

Indexed keywords

ENERGY GAP; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HEXAGONAL CRYSTALLINE; LASER DEPOSITIONS; NITROGEN CONCENTRATIONS; NITROGEN INCORPORATION; OPTOELECTRONIC PROPERTIES; REACTIVE PULSED LASER DEPOSITION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; ZINC OXIDE THIN FILMS;

NITROGEN;

EID: 84902106676     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2014.05.020     Document Type: Article

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