Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition

Thin Solid Films

Volumn 517, Issue 15, 2009, Pages 4355-4359

  Dong, Lin ^a   Sun, Qing Qing ^a   Shi, Yu ^a   Guo, Hao Wen ^a   Liu, Han ^a   Wang, Chen ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a ASIC and System   (China)

Author keywords

Atomic layer deposition; Density functional theory; Zinc oxide

Indexed keywords

ADSORPTION ENERGIES; ATOMIC-LAYER DEPOSITIONS; ATOMISTIC MECHANISMS; DIETHYL ZINCS; EXOTHERMIC ENERGIES; HALF REACTIONS; METAL PRECURSORS; NITROGEN-DOPED; NITROGEN-DOPING; P-TYPE IMPURITIES; REACTION MECHANISMS; REACTION PATHWAYS; SI(1 0 0 ); ZINC PRECURSORS; ZNO;

ADSORPTION; ATOMIC LAYER DEPOSITION; ATOMS; DOPING (ADDITIVES); NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

DENSITY FUNCTIONAL THEORY;

EID: 65449135070     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.014     Document Type: Article

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