Enhancement of near-band-edge photoluminescence from ZnO films by face-to-face annealing

Journal of Crystal Growth

Volumn 259, Issue 4, 2003, Pages 335-342

  Wang, Y G ^a   Lau, S P ^a   Zhang, X H ^b   Hng, H H ^c   Lee, H W ^a   Yu, S F ^a   Tay, B K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A3. Physical vapor deposition processes; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; GROWTH (MATERIALS); HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SURFACE ROUGHNESS;

BULK DEFECT DENSITY;

ZINC OXIDE;

EID: 0142217408     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.015     Document Type: Article

References (36)

1. Van de Walle C.G. Physica B. 308-310:2001;899.
2. Look D.C. Mater. Sci. Eng. B. 75:2000;190.
3. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., Goto T. Appl. Phys. Lett. 70:1997;2230.
4. Ohtomo A., Tamura K., Kawasaki M., Makino T., Segawa Y., Tang Z.K., Wong G.K.L., Matsumoto Y., Koinuma K. Appl. Phys. Lett. 77:2000;2204.
5. Cho S., Ma J., Kim Y., Sun Y., Wong G.K.L., Ketterson J.B. Appl. Phys. Lett. 75:1999;2761.
6. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., Yang P. Science. 292:2001;1897.
7. Zolper J.C., Crawford M.H., Howard A.J., Ramer J., Hersee S.D. Appl. Phys. Lett. 68:1996;200.
8. Bell A., Harrison I., Korakakis D., Larkins E.C., Hayes J.M., Kuball M., Grandjean N., Massies J. J. Appl. Phys. 89:2001;1070.
9. Kanber H., Cipolli R.J., Henderson W.B., Whelan J.M. J. Appl. Phys. 57:1984;4732.
10. Vanhensden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., Gnade B.E. J. Appl. Phys. 79:1996;7983.
11. Shi W.S., Agyeman O., Xu C.N. J. Appl. Phys. 91:2002;5640.
12. Ogata K., Sakurai K., Fujita S., Fjita S., Matsushige K. J. Crystal Growth. 214/215:2000;312.
13. Cho J., Nah J., Oh M.S., Song J.H., Yoon K.H., Jung H.J., Choi W.K. Jpn. J. Appl. Phys. 40:2001;L1040.
14. Ozaki K., Gomi M. Jpn. J. Appl. Phys. 41:2002;5614.
15. Ohashi N., Ishigaki T., Okada N., Sekiguchi T., Sakaguchi I., Haneda H. Appl. Phys. Lett. 80:2002;2869.
16. Xu X.L., Lau S.P., Chen J.S., Chen G.Y., Tay B.K. J. Crystal Growth. 233:2001;201.
17. Studenikin S.A., Golego N., Cocivera M. J. Appl. Phys. 84:1998;2287.
18. Reynolds D.C., Look D.C., Jogai B. J. Appl. Phys. 89:2001;6189.
19. Wu X.L., Siu G.G., Fu C.L., Ong H.C. Appl. Phys. Lett. 78:2001;2285.
20. Garces N.Y., Wang L., Bai L., Giles N.C., Halliburton L.E., Cantwell G. Appl. Phys. Lett. 81:2002;622.
21. Kohan A.F., Ceder G., Morgan D., Van de Walle C.G. Phys. Rev. B. 61:2000;15019.
22. Zhang S.B., Wei S.-H., Zunger A. Phys. Rev. B. 63:2001;75205.
23. Hino T., Tomiya S., Miyajima T., Yanashima K., Hashimoto S., Ikeda M. Appl. Phys. Lett. 76:2000;3421.
24. Toyami S., Morrita E., Ukita M., Okuyama H., Itoh S., Nakano K., Ishibashi A. Appl. Phys. Lett. 66:1995;1208.
25. Elsner J., Jones R., Sitch P.K., Porezag V.D., Elstner M., Frauenheim Th., Heggie M.I., Oberg S., Briddon P.R. Phys. Rev. Lett. 79:1997;3672.
26. Karpov S.Y., Makarov Y.N. Appl. Phys. Lett. 81:2002;4721.
27. Ko H.J., Yao T., Chen Y.F., Hong S.K. J. Appl. Phys. 92:2002;354.
28. Koida T., Chichibu S.F., Uedono A., Tsukazaki A., Kawasaki M., Sota T., Segawa Y., Koinuma H. Appl. Phys. Lett. 82:2003;532.
29. Matsumoto T., Kato H., Miyamoto K., Sano M., Zhukov E.A., Yao T. Appl. Phys. Lett. 81:2002;1231.
30. Studenikin S.A., Cocivera M. J. Appl. Phys. 91:2002;5060.
31. Tomlines G.W., Roubort J.L., Mason T.O. J. Am. Ceram. Soc. 81:1998;869.
32. Tomlines G.W., Roubort J.L., Mason T.O. J. Appl. Phys. 87:2000;117.
33. Van Vechten J.A. Moss T.S., Keller S.P. Handbook on Semiconductors. 1980;North-Holland, Amsterdam. (Chapter. 1).
34. Look D.C., Hemsky J.W., Sizelove J.R. Phys. Rev. Lett. 82:1999;2552.
35. Geistlinger H. J. Appl. Phys. 80:1996;1370.
36. Ip K., Overberg M.E., Heo Y.W., Norton D.P., Pearton S.J., Stutz C.E., Luo B., Ren F., Look D.C., Zavada J.M. Appl. Phys. Lett. 82:2003;385.