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Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

(2) Liu, H F a Chua, S J a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR SHIFT; ANNEALING TEMPERATURES; DIFFRACTION PEAKS; DOPING CONCENTRATION; LOCAL VIBRATIONAL MODE; PHOSPHORUS CONCENTRATION; PHOSPHORUS DOPING; POSTGROWTH ANNEALING; POSTGROWTH THERMAL ANNEALING; RAMAN FEATURE; RAMAN SPECTRA; VIBRATIONAL MODES; ZNO; ZNO THIN FILM;

PHOSPHORUS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

ANNEALING;

EID: 77949404961 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3337099 Document Type: Article

Times cited : (31)

References (19)

1
- 41049100051
- APPLAB 0003-6951. 10.1063/1.2900711
- H. S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y. L. Wang, and F. Ren, Appl. Phys. Lett. APPLAB 0003-6951 92, 112108 (2008). 10.1063/1.2900711
- (2008) Appl. Phys. Lett. , vol.92 , pp. 112108
- Kim, H.S.¹ Lugo, F.² Pearton, S.J.³ Norton, D.P.⁴ Wang, Y.L.⁵ Ren, F.⁶

2
- 31944446414
- APPLAB 0003-6951. 10.1063/1.2194870
- F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu, Appl. Phys. Lett. APPLAB 0003-6951 88, 152116 (2006). 10.1063/1.2194870
- (2006) Appl. Phys. Lett. , vol.88 , pp. 152116
- Xiu, F.X.¹ Yang, Z.² Mandalapu, L.J.³ Liu, J.L.⁴

3
- 33644929693
- APPLAB 0003-6951. 10.1063/1.2182107
- J. D. Ye, S. L. Gu, S. M. Zhu, S. M. Liu, Y. D. Zheng, R. Zhang, Y. Shi, Q. Chen, H. Q. Yu, and Y. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951 88, 101905 (2006). 10.1063/1.2182107
- (2006) Appl. Phys. Lett. , vol.88 , pp. 101905
- Ye, J.D.¹ Gu, S.L.² Zhu, S.M.³ Liu, S.M.⁴ Zheng, Y.D.⁵ Zhang, R.⁶ Shi, Y.⁷ Chen, Q.⁸ Yu, H.Q.⁹ Ye, Y.D.¹⁰

4
- 20844459633
- APPLAB 0003-6951. 10.1063/1.1895480
- D. K. Hwang, H. S. Kim, J. H. Lim, J. Y. Oh, J. H. Yang, S. J. Park, K. K. Kim, D. C. Look, and Y. S. Park, Appl. Phys. Lett. APPLAB 0003-6951 86, 151917 (2005). 10.1063/1.1895480
- (2005) Appl. Phys. Lett. , vol.86 , pp. 151917
- Hwang, D.K.¹ Kim, H.S.² Lim, J.H.³ Oh, J.Y.⁴ Yang, J.H.⁵ Park, S.J.⁶ Kim, K.K.⁷ Look, D.C.⁸ Park, Y.S.⁹

5
- 42149132020
- PSISDG 0277-786X. 10.1117/12.785467
- D. P. Norton, H. S. Kim, J. M. Erie, S. J. Pearton, Y. L. Wang, and F. Ren, Proc. SPIE PSISDG 0277-786X 6895, 68950W (2008). 10.1117/12.785467
- (2008) Proc. SPIE , vol.6895
- Norton, D.P.¹ Kim, H.S.² Erie, J.M.³ Pearton, S.J.⁴ Wang, Y.L.⁵ Ren, F.⁶

6
- 13944283752
- CMATEX 0897-4756. 10.1021/cm0482176
- Z. G. Yu, H. Gong, and P. Wu, Chem. Mater. CMATEX 0897-4756 17, 852 (2005). 10.1021/cm0482176
- (2005) Chem. Mater. , vol.17 , pp. 852
- Yu, Z.G.¹ Gong, H.² Wu, P.³

7
- 4444379304
- PSSBBD 0370-1972. 10.1002/pssb.200304271
- D. C. Look and B. Claflin, Phys. Status Solidi B PSSBBD 0370-1972 241, 624 (2004). 10.1002/pssb.200304271
- (2004) Phys. Status Solidi B , vol.241 , pp. 624
- Look, D.C.¹ Claflin, B.²

8
- 0042842374
- APPLAB 0003-6951. 10.1063/1.1590423
- Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. APPLAB 0003-6951 83, 87 (2003). 10.1063/1.1590423
- (2003) Appl. Phys. Lett. , vol.83 , pp. 87
- Ryu, Y.R.¹ Lee, T.S.² White, H.W.³

9
- 33144467618
- PRBMDO 0163-1829. 10.1103/PhysRevB.73.024117
- W. J. Lee, J. G. Kang, and K. J. Chang, Phys. Rev. B PRBMDO 0163-1829 73, 024117 (2006). 10.1103/PhysRevB.73.024117
- (2006) Phys. Rev. B , vol.73 , pp. 024117
- Lee, W.J.¹ Kang, J.G.² Chang, K.J.³

10
- 0042842376
- APPLAB 0003-6951. 10.1063/1.1591064
- K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, Appl. Phys. Lett. APPLAB 0003-6951 83, 63 (2003). 10.1063/1.1591064
- (2003) Appl. Phys. Lett. , vol.83 , pp. 63
- Kim, K.K.¹ Kim, H.S.² Hwang, D.K.³ Lim, J.H.⁴ Park, S.J.⁵

11
- 52349106314
- APPLAB 0003-6951. 10.1063/1.2936962
- M. S. Oh, D. K. Hwang, Y. S. Choi, J. W. Kang, S. J. Park, C. S. Hwang, and K. I. Cho, Appl. Phys. Lett. APPLAB 0003-6951 93, 111905 (2008). 10.1063/1.2936962
- (2008) Appl. Phys. Lett. , vol.93 , pp. 111905
- Oh, M.S.¹ Hwang, D.K.² Choi, Y.S.³ Kang, J.W.⁴ Park, S.J.⁵ Hwang, C.S.⁶ Cho, K.I.⁷

12
- 68249152258
- JAPIAU 0021-8979. 10.1063/1.3176497
- H. F. Liu and S. J. Chua, J. Appl. Phys. JAPIAU 0021-8979 106, 023511 (2009). 10.1063/1.3176497
- (2009) J. Appl. Phys. , vol.106 , pp. 023511
- Liu, H.F.¹ Chua, S.J.²

13
- 33845943697
- APPLAB 0003-6951. 10.1063/1.2408652
- G. X. Hu, H. Gong, E. F. Chor, and P. Wu, Appl. Phys. Lett. APPLAB 0003-6951 89, 251102 (2006). 10.1063/1.2408652
- (2006) Appl. Phys. Lett. , vol.89 , pp. 251102
- Hu, G.X.¹ Gong, H.² Chor, E.F.³ Wu, P.⁴

14
- 73849136240
- JAPIAU 0021-8979. 10.1063/1.3271354
- G. X. Hu, H. Gong, Y. Wang, and H. F. Liu, J. Appl. Phys. JAPIAU 0021-8979 106, 123522 (2009). 10.1063/1.3271354
- (2009) J. Appl. Phys. , vol.106 , pp. 123522
- Hu, G.X.¹ Gong, H.² Wang, Y.³ Liu, H.F.⁴

15
- 79956060574
- APPLAB 0003-6951. 10.1063/1.1461903
- A. Kaschner, U. Haboeck, M. Strassburg, M. Strassburg, G. Kaczmarczyk, A. Hoffmann, C. Thomsen, A. Zeuner, H. R. Alves, D. M. Hofmann, and B. K. Meyer, Appl. Phys. Lett. APPLAB 0003-6951 80, 1909 (2002). 10.1063/1.1461903
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1909
- Kaschner, A.¹ Haboeck, U.² Strassburg, M.³ Strassburg, M.⁴ Kaczmarczyk, G.⁵ Hoffmann, A.⁶ Thomsen, C.⁷ Zeuner, A.⁸ Alves, H.R.⁹ Hofmann, D.M.¹⁰ Meyer, B.K.¹¹

16
- 0141886199
- APPLAB 0003-6951. 10.1063/1.1609251
- C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 83, 1974 (2003). 10.1063/1.1609251
- (2003) Appl. Phys. Lett. , vol.83 , pp. 1974
- Bundesmann, C.¹ Ashkenov, N.² Schubert, M.³ Spemann, D.⁴ Butz, T.⁵ Kaidashev, E.M.⁶ Lorenz, M.⁷ Grundmann, M.⁸

17
- 38849191740
- JAPIAU 0021-8979. 10.1063/1.2837110
- C. L. Du, Z. B. Gu, Y. M. You, J. Kasim, T. Yu, Z. X. Shen, Z. H. Ni, Y. Ma, G. X. Cheng, and Y. F. Chen, J. Appl. Phys. JAPIAU 0021-8979 103, 023521 (2008). 10.1063/1.2837110
- (2008) J. Appl. Phys. , vol.103 , pp. 023521
- Du, C.L.¹ Gu, Z.B.² You, Y.M.³ Kasim, J.⁴ Yu, T.⁵ Shen, Z.X.⁶ Ni, Z.H.⁷ Ma, Y.⁸ Cheng, G.X.⁹ Chen, Y.F.¹⁰

18
- 20644453546
- JAPIAU 0021-8979. 10.1063/1.1856222
- F. J. Manjón, B. Marí, J. Serrano, and A. H. Romero, J. Appl. Phys. JAPIAU 0021-8979 97, 053516 (2005). 10.1063/1.1856222
- (2005) J. Appl. Phys. , vol.97 , pp. 053516
- Manjón, F.J.¹ Marí, B.² Serrano, J.³ Romero, A.H.⁴

19
- 33645026551
- JCRGAE 0022-0248. 10.1016/j.jcrysgro.2005.12.114
- H. F. Liu, N. Xiang, and S. J. Chua, J. Cryst. Growth JCRGAE 0022-0248 290, 24 (2006). 10.1016/j.jcrysgro.2005.12.114
- (2006) J. Cryst. Growth , vol.290 , pp. 24
- Liu, H.F.¹ Xiang, N.² Chua, S.J.³

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