Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 4, 2002, Pages 1-7

  Law, D C ^a   Sun, Y ^a   Li, C H ^a   Visbeck, S B ^a   Chen, G ^a   Hicks, R F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84902003172     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.045314     Document Type: Article

References (49)

1. A. Y. Lew, C. H. Yan, R. B. Welstand, J. T. Zhu, C. W. Tu, P. K. L. Yu, and E. T. Yu, J. Electron. Mater. 26, 64 (1997).
2. T. Nakamura, S. Ae, T. Terakado, T. Torikai, and T. Uji, J. Electron. Mater. 25, 457 (1996).
3. W. P. Gillin, S. S. Rao, I. V. Bradley, K. P. Homewood, A. D. Smith, and B. A. T. R., Appl. Phys. Lett. 63, 797 (1993).
4. S. L. Wong, R. J. Nicholas, R. W. Martin, J. Thompson, A. Wood, A. Moseley, and N. Carr, J. Appl. Phys. 79, 6826 (1996).
5. B. W. Liang and C. W. Tu, J. Appl. Phys. 74, 255 (1993).
6. C. Lamberti, S. Bordiga, F. Boscherini, S. Mobilio, S. Pascarelli, L. Gastaldi, M. Madella, C. Papuzza, C. Rigo, D. Soldani, C. Ferrari, L. Lazzarini, and G. Salviati, J. Appl. Phys. 83, 1058 (1998).
7. A. S. Jordan and A. Robertson, J. Vac. Sci. Technol. A 12, 204 (1994).
8. T. Anan, S. Sugou, K. Nishi, and T. Ichihashi, Appl. Phys. Lett. 63, 1047 (1993).
9. D. E. Aspnes, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory, and S. A. Schwarz, Appl. Phys. Lett. 64, 3279 (1994).
10. W. Wu, S. L. Skala, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam III, and D. Jovanovic, J. Vac. Sci. Technol. A 13, 602 (1995).
11. A. Freundlich, M. F. Vilela, C. Monier, L. Aguilar, F. Newman, and I. Serdiukova, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference-1997 (Cat. No. 97CB36026).
12. M. Takemi, Y. Mihashi, T. Shiba, and M. Aiga, J. Cryst. Growth 191, 18 (1998).
13. J. Hergeth, D. Grützmacher, F. Reinhardt, and P. Balk, J. Cryst. Growth 107, 537 (1991).
14. J. Camassel, J. P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz, and D. Grützmacher, J. Cryst. Growth 107, 543 (1991).
15. D. C. Law, L. Li, M. J. Begarney, and R. F. Hicks, J. Appl. Phys. 88, 508 (2000).
16. M. J. Begarney, Ph.D. Dissertation, University of California, Los Angeles, 2001.
17. C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, and G. E. Muilenberg, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Norwalk, CT, 1979).
18. S. Tanuma, C. J. Powell, and D. R. Penn, Acta Phys. Pol. A 81, 169 (1992).
19. G. Gergely, M. Menyhard, S. Gurban, Z. Benedek, C. Daroczi, V. Rakovics, J. Toth, D. Varga, M. Krawczyk, and A. Jablonski, Surf. Interface Anal. 30, 195 (2000).
20. L. Li, B.-K. Han, D. Law, C. H. Li, Q. Fu, and R. F. Hicks, Appl. Phys. Lett. 75, 683 (1999).
21. L. Li, B.-K. Han, Q. Fu, and R. F. Hicks, Phys. Rev. Lett. 82, 1879 (1998).
22. L. Li, Q. Fu, C. H. Li, B.-K. Han, and R. F. Hicks, Phys. Rev. B 61, 10 223 (2000).
23. M. J. Begarney, C. H. Li, D. C. Law, S. B. Visbeck, Y. Sun, and R. F. Hicks, Appl. Phys. Lett. 78, 55 (2001).
24. D. C. Law, Q. Fu, S. Visbeck, Y. Sun, and R. F. Hicks, Surf. Sci. 496, 121 (2001).
25. C. H. Li, L. Li, D. C. Law, S. B. Visbeck, and R. F. Hicks, Phys. Rev. B (to be published).
26. L. Li, B. K. Han, and R. F. Hicks, Appl. Phys. Lett. 73, 1239 (1998).
27. L. Li, B. K. Han, S. Gan, H. Qi, and R. F. Hicks, Surf. Sci. 398, 386 (1998).
28. C. Ratsch, W. Barvosa-Carter, F. Gross, J. H. G. Owen, and J. J. Zinck, Phys. Rev. B 62, R7719 (2000).
29. M. D. Pashley, Phys. Rev. B 40, 10 481 (1989).
30. D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz, Phys. Rev. B 41, 5701 (1990).
31. T. Hannappel, S. Visbeck, M. Zorn, J.-T. Zettler, and F. Willig, J. Cryst. Growth 221, 124 (2000).
32. S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama, and K. Tada, Thin Solid Films 313-314, 604 (1998).
33. K. N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film Science for Electrical Engineers and Materials Scientist (Macmillan, New York, 1992).
34. S. Anand, C. F. Carlstrom, A. Patel, E. Niemi, B. Stalnacke, and G. Landgren, Proc. SPIE 3975, 1033 (2000).
35. C. F. Carlstrom, S. Anand, E. Niemi, and G. Landgren, Eleventh International Conference on Indium Phosphide and Related Materials (IPRM’99) (Cat. No. 99CH36362), IEEE, (1999), p. 519.
36. B. Wang, F. Zhao, Y. Peng, Z. Jin, Y. Li, and S. Liu, Appl. Phys. Lett. 72, 2433 (1998).
37. I. Rasnik, M. J. S. P. Brasil, F. Cerdeira, C. A. C. Mendonca, and M. A. Cotta, J. Appl. Phys. 87, 1165 (2000).
38. D. R. Stull and G. C. Sinke, Thermodynamic Properties of The Elements (American Chemical Society, Washington DC, 1956).
39. K. Yamaguchi, Y. Takeda, K. Kameda, and K. Itagaki, Mater. Trans., JIM 35, 596 (1994).
40. K. Yamaguchi, Y. Chiba, M. Yoshizawa, and K. Kameda, J. Jpn. Inst. Met. 60, 1181 (1996).
41. L. G. Qualgliano, B. Jusserand, and D. Orani, Phys. Rev. B 56, 4919 (1997).
42. M. Washima, T. Tsuchiya, T. Tani, and H. Sakaguchi, Conference Proceedings, Seventh International Conference on Indium Phosphide and Related Materials. (Cat. No. 95CH35720) IEEE (1995).
43. P. Ebert, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys. Rev. B 51, 9696 (1995).
44. M. Heinrich, P. Ebert, M. Simon, K. Urban, and M. G. Lagally, J. Vac. Sci. Technol. A 13, 1714 (1995).
45. P. Juza, W. Faschinger, K. Hingerl, and H. Sitter, Semicond. Sci. Technol. 5, 191 (1990).
46. R. F. Scholz and U. Gosele, J. Appl. Phys. 87, 704 (2000).
47. R. C. Jaeger, Introduction of Microelectronic Fabrication (Addison-Wesley, Reading, MA, 1988).
48. Y. Feurprier, C. Cardinaud, and G. Turban, J. Vac. Sci. Technol. B 16, 1823 (1998).
49. L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis (Elsevier Science, New York, 1986).