Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 457-461

  Nakamura, T ^a   Ae, S ^a   Terakado, T ^a   Torikai, T ^a   Uji, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Abrupt InGaAs InP MQW interfaces; Arsenic contamination; As P exchange reaction; TBA TBP

Indexed keywords

EID: 0010410828     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666620     Document Type: Article

References (10)

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