Interface structure in arsenide/phosphide heterostructures grown by gas-source MBE and low-pressure MOVPE

Journal of Electronic Materials

Volumn 26, Issue 2, 1997, Pages 64-69

  Lew, A Y ^a   Yan, C H ^a   Welstand, R B ^a   Zhu, J T ^a   Tu, C W ^a   Yu, P K L ^a   Yu, E T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

GAS SOURCE MOLECULAR BEAM EPITAXY; HIGH RESOLUTION X RAY DIFFRACTION; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031076790     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0089-5     Document Type: Article

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