In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 604-608

  Sudo, Shinya ^a   Nakano, Yoshiaki ^a   Sugiyama, Masakazu ^a   Shimogaki, Yukihiro ^a   Komiyama, Hiroshi ^a   Tada, Kunio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Arsenic phosphorus exchange; In situ monitoring; Kinetic ellipsometry; MOVPE; Organic group V precursors; Spectroscopic ellipsometry

Indexed keywords

ARSENIC; ELLIPSOMETRY; KINETIC THEORY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

KINETIC ELLIPSOMETRY; SPECTROSCOPIC ELLIPSOMETRY (SE);

HETEROJUNCTIONS;

EID: 0032002822     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00894-8     Document Type: Article

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