A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 683-685

  Li, L ^a   Han, B K ^a   Law, D ^a   Li, C H ^a   Fu, Q ^a   Hicks, R F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; HYDROGEN; INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PHOSPHORUS COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

DIMERIZATION;

SEMICONDUCTING FILMS;

EID: 0032607574     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124481     Document Type: Article

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