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Volumn 191, Issue 1-2, 1998, Pages 18-23

High-resolution X-ray diffraction studies on growth interrupted heterointerfaces grown by metalorganic vapor-phase epitaxy

(4) Takemi, M a Mihashi, Y a Shiba, T a Aiga, M a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

Growth interruption; HR XRD; Interface; MOVPE; Substitution

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MULTILAYERS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

ARSINES;

HETEROJUNCTIONS;

EID: 0032122029 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00118-3 Document Type: Article

Times cited : (7)

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