SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 398, Issue 3, 1998, Pages 386-394

Observation of the atomic surface structure of GaAs (001) films grown by metalorganic vapor-phase epitaxy

(5) Li, L a Han, B a Gan, S a Qi, H a Hicks, R F a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Chemical vapor deposition; Gallium arsenide; Reconstruction; Scanning tunneling microscopy

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

SURFACE RECONSTRUCTION;

SEMICONDUCTING FILMS;

EID: 0031997651 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)80044-7 Document Type: Article

Times cited : (40)

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