SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 11, 2014, Pages 1562-1574

Scalable oxygen-ion transport kinetics in metal-oxide films: Impact of thermally induced lattice compaction in acceptor doped ceria films

(8) Rupp, Jennifer L M a,e Fabbri, Emiliana b Marrocchelli, Dario a,c Han, Jeong Woo a Chen, Di a Traversa, Enrico f Tuller, Harry L a,d Yildiz, Bilge a

a Massachusetts Institute of Technology Cambridge (United States)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c TRINITY COLLEGE DUBLIN (Ireland)

d KYUSHU UNIVERSITY (Japan)

e ETH ZURICH (Switzerland)

f XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

ceria; CGO; ionic conductivity; metal oxides; micro devices; strain; thin films

Indexed keywords

ANNEALING TEMPERATURES; CERIA BASED MATERIALS; CGO; ELECTROLYTE THIN FILM; METAL OXIDES; MICRO-DEVICES; OXYGEN-ION CONDUCTIVITY; TECHNOLOGICAL APPLICATIONS;

ANNEALING; CERIUM COMPOUNDS; COMPACTION; DROPS; IONIC CONDUCTIVITY; LATTICE CONSTANTS; OXIDE FILMS; OXYGEN; POSITIVE IONS; RANDOM ACCESS STORAGE; SOLID ELECTROLYTES; STRAIN; THIN FILMS;

SEMICONDUCTOR DOPING;

EID: 84900614649 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201302117 Document Type: Article

Times cited : (73)

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