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Volumn 133, Issue 44, 2011, Pages 17696-17704

Surface electronic structure transitions at high temperature on perovskite oxides: The case of strained La 0.8Sr 0.2CoO 3 thin films

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SURFACES; CHEMICAL STATE; DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTRON TRANSFER; ELECTRONIC DENSITY; ELEVATED TEMPERATURE; FILM SURFACES; HIGH TEMPERATURE; IN-SITU; MODEL TRANSITION; OXYGEN PARTIAL PRESSURE; OXYGEN PRESSURE; OXYGEN REDUCTION; OXYGEN VACANCY DEFECTS; PEROVSKITE OXIDES; ROOM TEMPERATURE; SOFC CATHODE MATERIAL; STRAIN STATE; SURFACE ELECTRONIC STRUCTURES;

EID: 80455178590     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja2059445     Document Type: Article
Times cited : (163)

References (80)
  • 30
    • 77953947062 scopus 로고    scopus 로고
    • U.S. Department of Commerce.
    • NIST Database 82, U.S. Department of Commerce, 2001.
    • (2001) NIST Database 82
  • 39
    • 0004157278 scopus 로고    scopus 로고
    • 4th ed. Monograph 9; American Institute of Physics: St. Louis, MO.
    • Chase, M. W., Jr. NIST-JANAF Themochemical Tables, 4th ed.; Monograph 9; American Institute of Physics: St. Louis, MO, 1998.
    • (1998) NIST-JANAF Themochemical Tables
    • Chase Jr., M.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.