Lattice distortion effect on electrical properties of GDC thin films: Experimental evidence and computational simulation

Solid State Ionics

Volumn 229, Issue , 2012, Pages 45-53

  Lee, Kyung Ryul ^a,b   Ahn, Kiyong ^b,c   Chung, Yong Chae ^c   Lee, Jong Ho ^b   Yoo, Han Ill ^a  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

Ab initio calculation; Activation energy; Electrical conductivity; GDC; Strain; Thin film

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; ANISOTROPIC LATTICES; ANISOTROPIC STRAIN; ATOMIC-SCALE SIMULATIONS; COMPUTATIONAL SIMULATION; CRYSTALLINE LATTICE; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; EXPERIMENTAL EVIDENCE; FILM-SUBSTRATE INTERFACES; GDC; LATTICE DISTORTIONS; MECHANICAL STRAIN; MICRO-STRUCTURAL; OXIDE IONS; OXYGEN MIGRATION; STRUCTURAL CHANGE;

ACTIVATION ENERGY; ANISOTROPY; CERIUM COMPOUNDS; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; GADOLINIUM; SAPPHIRE; STRAIN; THIN FILMS;

INTERFACES (MATERIALS);

EID: 84868506679     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2012.10.007     Document Type: Article

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