SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 14, 2012, Pages 1862-1866

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

(8) Liao, Zhi Min a,b Wu, Han Chun b Kumar, Shishir b Duesberg, Georg S b Zhou, Yang Bo a Cross, Graham L W b Shvets, Igor V b Yu, Da Peng a

a PEKING UNIVERSITY (China)

b TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

anisotropic MR; magnetoresistance; multilayer graphene; temperature dependence; weak antilocalization

Indexed keywords

ANISOTROPIC MR; CURRENT PERPENDICULAR TO PLANE; DEVICE APPLICATION; FEW-LAYER GRAPHENE; GRAPHENE PLANE; LOW-POWER CONSUMPTION; METAL ELECTRODES; NON-SATURATION; NONMAGNETICS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TWO LAYERS; WEAK ANTILOCALIZATION;

ANISOTROPY; ELECTRIC RESISTANCE; MAGNETOELECTRONICS; MAGNETORESISTANCE;

GRAPHENE;

GRAPHITE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; MAGNETISM; TEMPERATURE;

ELECTRODES; GRAPHITE; MAGNETICS; SILICON DIOXIDE; TEMPERATURE;

EID: 84859569072 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104796 Document Type: Article

Times cited : (77)

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