Investigation of lifetime-limiting defects after high-temperature phosphorus diffusion in high-iron-content multicrystalline silicon

IEEE Journal of Photovoltaics

Volumn 4, Issue 3, 2014, Pages 866-873

  Fenning, David P ^a,b   Zuschlag, Annika S ^c   Hofstetter, Jasmin ^a   Frey, Alexander ^c   Bertoni, Mariana I ^d   Hahn, Giso ^c   Buonassisi, Tonio ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF CALIFORNIA SAN DIEGO   (United States)

^c UNIVERSITY OF KONSTANZ   (Germany)

^d AZ 85281   (United States)

Author keywords

Dislocation density; iron gettering; minority carrier lifetime; phosphorus diffusion; silicon solar cells

Indexed keywords

DIFFUSION; IRON; POLYSILICON; REFLECTIVE COATINGS; SILICON SOLAR CELLS;

DISLOCATION DENSITIES; IRON GETTERING; MINORITY CARRIER LIFETIMES; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE MATERIALS; MULTICRYSTALLINE SILICON SOLAR CELL MATERIALS; PHOSPHORUS DIFFUSION; STRUCTURAL DEFECT DENSITY;

PHOSPHORUS;

EID: 84899756411     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2312485     Document Type: Article

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