Impact of impurities from crucible and coating on mc-silicon quality-The example of iron and cobalt

IEEE Journal of Photovoltaics

Volumn 3, Issue 4, 2013, Pages 1250-1258

  Schubert, Martin C ^a   Schon, Jonas ^a   Schindler, Florian ^a,b   Kwapil, Wolfram ^a,b   Abdollahinia, Alireza ^a,b   Michl, Bernhard ^a   Riepe, Stephan ^a   Schmid, Claudia ^a   Schumann, Mark ^a   Meyer, Sylke ^c   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

Author keywords

Crucible; iron; silicon; simulation; vertical gradient freeze (VGF)

Indexed keywords

IMPURITY CONCENTRATION; INDUCTIVELY COUPLED PLASMA MASS SPECTROSCOPIES; INTERSTITIAL IRON; LOW CONCENTRATIONS; MULTI-CRYSTALLINE SILICON; SENTAURUS PROCESS; SIMULATION; VERTICAL GRADIENT FREEZE;

COATINGS; COBALT; CRUCIBLES; CRYSTAL IMPURITIES; DIFFUSION; INDUCTIVELY COUPLED PLASMA; IRON; MASS SPECTROMETRY; METAL CASTINGS; QUARTZ; SILICON;

SILICON WAFERS;

EID: 84884670691     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2279116     Document Type: Article

References (35)

1. P. Engelhart, D. Manger, B. Kl̈oter, S. Hermann, A. A. Stekolnikov, S. Peters, H.-C. Ploigt, A. Eifler, C. Klenke, A. Mohr, G. Zimmermann, B. Barkenfelt, K. Suva, J. Wendt, T. Kaden, S. Rupp, D. Rychtarik, M. Fischer, and J. W.M̈uller, "Q.ANTUM: Q-Cells nect generation highpower silicon solar cell&module concept," in Proc. 26thEur.Photovoltaic Solar Energy Conf. Exhib., Hamburg, Germany, 2011.
2. K. M. Yeh, C. K. Hseih, W. C. Hsu, and C. W. Lan, "High-quality multicrystalline silicon growth for solar cells by grain-controlled directional solidification," Progr. Photovoltaics, vol. 18, pp. 265-271, 2010.
3. N. Stoddard, B. Wu, I. Witting, M. C. Wagener, Y. Park, G. Rozgonyi, and R. Clark, "Casting single crystal silicon: novel defect profiles from BP Solar's Mono2 TMWafer," Solid State Phenomena, vol. 131, pp. 1-8, 2007.
4. B. Geyer, G. Schwichtenberg, and A. M̈uller, "Increased wafer yield in silicon ingots by the applications of high purity silicon nitride-coating and high-purity crucibles," in Proc. IEEE 31st Photovoltaic Spec. Conf., 2005.
5. E. Olsen and E. J. Ovrelid, "Silicon nitride coating and crucible: Effects of using upgraded materials in the casting of multicrystalline silicon ingots," Progr. Photovoltaics, vol. 16, pp. 93-100, 2008.
6. R. Kvande, L. Arnberg, and C. Martin, "Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells," J. Crystal Growth, vol. 311, pp. 765-768, 2009.
7. T. Naerland, L. Arnberg, and A. Holt, "Origin of the low carrier lifetime edge zone in multicrystalline Pv silicon," Progr. Photovoltaics: Res. Appl., vol. 17, pp. 289-296, 2009.
8. A. Montaser, Inductively Coupled Plasma Mass Spectrometry. New York, NY, USA: Wiley-vch, 1998.
9. D. Macdonald, J. Tan, and T. Trupke, "Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence, " J. Appl. Phys., vol. 103, p. 073710, 2008.
10. M. C. Schubert, H. Habenicht, and W. Warta, "Imaging of metastable defects in silicon," J. Photovoltaics, vol. 1, pp. 168-173, 2011.
11. M. Scḧofthaler and R. Brendel, "Sensitivity and transient response of microwave reflection measurements," J. Appl. Phys., vol. 77, pp. 3162-3173, 1995.
12. Intego (2013). Gemini Kornstrukturanalyse. Available: www.intego.de.
13. R. Bakowskie, G. Kesser, R. Richter, D. Lausch, A. Eidner, P. Clemens, and K. Petter, "Fast method to determine the structural defect density of 156 ?156 mm2 Mc-Si Wafers," Energy Procedia, vol. 27, pp. 179-184, 2012.
14. T. Trupke, R. A. Bardos, M. C. Schubert, and W. Warta, "Photoluminescence imaging of silicon wafers," Appl. Phys. Lett., vol. 89, pp. 1-3, 2006.
15. J. Giesecke, M. C. Schubert, D. Walter, and W. Warta, "Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence, " Appl. Phys. Lett., vol. 97, p. 092109, 2010.
16. A. Haarahiltunen, H. V̈ain̈ol̈a, O. Anttila, M. Yli-Koski, and J. Sinkkonen, "Experimental and theoretical study of heterogeneous iron precipitation in silicon," J. Appl. Phys., vol. 101, p. 043507, 2007.
17. J. Scḧon, H. Habenicht, M. C. Schubert, and W. Warta, "Understanding the distribution of iron in multicrystalline silicon after emitter formation: theoretical model and experiments," J. Appl. Phys., vol. 109, pp. 1-8, 2011.
18. J. Scḧon, A. Haarahiltunen, H. Savin, D. P. Fenning, T. Buonassisi, W. Warta, and M. C. Schubert, "Analyses of the evolution of iron-silicide precipitates in multicrystalline silicon during solar cell processing," J. Photovoltaics, vol. 3, pp. 131-137, 2013.
19. B. Michl, J. Scḧon,W.Warta, andM. C. Schubert, "The impact of different diffusion temperature profiles on iron concentrations and carrier lifetimes in multicrystalline silicon wafers," J. Photovoltaics, vol. 3, pp. 635-640, 2012.
20. A. Haarahiltunen, H. Talvitie, H. Savin, M. Yli-Koski, M. I. Asghar, and J. Sinkkonen, "Modeling boron diffusion gettering of iron in silicon solar cells," Appl. Phys. Lett., vol. 92, pp. 021902-1-021902-3, 2008.
21. A. A. Istratov, H. Hieslmair, and E. R. Weber, "Iron and its complexes in silicon," Appl. Phys. A, vol. 69, pp. 13-44, 1999.
22. D. Gilles, "Einfluss der elektronischen Struktur auf Diffusion, L̈oslichkeit und Paarbildung von 3d-Ü bergangselementen in Silizium," Ph.D. dissertation, Univ. G̈ottingen, G̈ottingen, Germany, 1987.
23. J. Utzig and D. Gilles, Mater. Sci. Forum, vol. 38-41, p. 729, 1989.
24. R. N. Ghoshtagore, "Diffusion of nickel in amorphous silicon dioxide and silicon nitride films," J. Appl. Phys., vol. 40, p. 4374, 1969.
25. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, "Diffusion of metals in silicon dioxide," J. Electrochemical Soc., vol. 133, p. 1242, 1986.
26. A. A. Istratov, H. V̈ain̈ola, W. Huber, and E. R. Weber, "Gettering in silicon-on-insulator wafers: experimental studies and modelling," Semicond. Sci. Technol., vol. 20, pp. 568-575, 2005.
27. J. Isenberg, S. Reber, S. Aschaber, and W. Warta, "Silicon dioxide and silicon nitride as diffusion barrier for transition metals in solar cell applications," in Proc. 16th EU-PVSEC, Glasgow, U.K., 2000.
28. S. Reber, "Electrical confinement for the crystalline silicon thin-film solar cell on foreign substrate," in Fachbereich Physik, Vol. Dr. rer. nat., Univ. Mainz, Mainz, Germany, 2000, p. 158.
29. D. A. Ramappa and W. B. Henley, "Diffusion of iron in silicon dioxide," J. Electrochemical Soc., vol. 146, p. 3773, 1999.
30. (2012). Synopsis, Synopsis TCAD, Rel. G-2012.06. [Online]. Available: http:/www.synopsis.com
31. STR, I., Graphical User Interface Reference Guide, Ver. 12.2.2012, 2012.
32. F. Schindler,B.Michl, J. Scḧon,W.Kwapil,W.Warta, andM. C. Schubert, "Solar cell efficiency losses due to impurities from the crucible in multicrystalline silicon," J. Photovoltaics, to be published.
33. E. Scheil and Z. Metallk. vol. 34, 1942, p. 70.
34. J. Scḧon, H. Habenicht, M. C. Schubert, andW.Warta, "Simulation of iron distribution after crystallization of mc silicon," Solid State Phenomena, vol. 156-158, pp. 223-228, 2010.
35. B. Michl, M. R̈udiger, J. Giesecke, M. Hermle, W. Warta, and M. C. Schubert, "Efficiency limiting bulk recombination in multicrystalline silicon solar cells," Solar Energy Mater. Solar Cells, vol. 98, pp. 441-447, 2012.