Interactions between metals and different grain boundary types and their impact on multicrystalline silicon device performance

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 944-947

  Buonassisi, Tonio ^a,b   Pickett, Matthew D ^a   Istratov, Andrei A ^a   Sauar, Erik ^c   Lommasson, Timothy C ^d   Marstein, Erik ^e   Pernau, Thomas ^f,g   Clark, R F ^h   Narayanan, S ^h   Heald, Steven M ⁱ   Weber, Eicke R ^a  

^a University of California Berkeley   (United States)

^b Evergreen Solar   (United States)

^c ScanWafer AS   (Norway)

^d ScanCell AS   (Norway)

^e INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^f UNIVERSITY OF KONSTANZ   (Germany)

^g CENTROTHERM PHOTOVOLTAICS AG   (Germany)

^h BP Solar ^*  (United States)

ⁱ ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; GRAIN BOUNDARIES; IMPACT IONIZATION; LATTICE CONSTANTS; MOLECULAR INTERACTIONS;

MULTICRYSTALLINE SILICON (MC-SI); SILICON DEVICE PERFORMANCE; X-RAY FLUORESCENCE MICROSCOPY;

POLYSILICON;

EID: 41749105987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279612     Document Type: Conference Paper

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