Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions

Applied Physics A: Materials Science and Processing

Volumn 96, Issue 1, 2009, Pages 207-220

  Moller H J ^a   Kaden, T ^a   Scholz, S ^a   Wurzner S ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL POTENTIAL; CONTAMINATION LEVELS; EXTENDED DEFECT; FOREIGN ATOMS; HIGH EFFICIENCY; INTERACTION PROCESS; LATTICE DEFECTS; METALLIC IMPURITY; MINORITY CARRIER; MULTI-CRYSTALLINE SILICON; NUCLEATION MECHANISM; RECOMBINATION ACTIVITY; SOLAR CELL EFFICIENCIES; SOLAR GRADE SILICONS; SOLAR-CELL APPLICATIONS;

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; PHOTOVOLTAIC CELLS; POLYSILICON; SOLAR CELLS;

DEFECTS;

EID: 67349120664     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5091-8     Document Type: Article

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