Effect of intentionally formed `V-defects' on the emission efficiency of GaInN single quantum well

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 6 B, 2000, Pages

  Takahashi, Hirokazu ^a   Ito, Atsuya ^a   Tanaka, Toshiyuki ^a   Watanabe, Atsushi ^a   Ota, Hiroyuki ^a   Chikuma, Kiyofumi ^a  

^a PIONEER CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM INDIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034204976     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l569     Document Type: Article

References (12)