Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Solid-State Electronics

Volumn 51, Issue 6, 2007, Pages 860-864

  Nanhui, Niu ^a   Huaibing, Wang ^a   Jianping, Liu ^a   Naixin, Liu ^a   Yanhui, Xing ^a   Jun, Han ^a   Jun, Deng ^a   Guangdi, Shen ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Atom force microscopy; Electroluminescence; LED; MOCVD; Multiple quantum wells; Nitrides; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE;

INJECTION CURRENT; STRAIN REDUCTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34250772287     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.04.007     Document Type: Article

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