Boosting green GaInN/GaN light-emitting diode performance by a GaInN underlying layer

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2639-2643

  Xia, Yong ^a   Hou, Wenting ^a   Zhao, Liang ^a   Zhu, Mingwei ^b   Detchprohm, Theeradetch ^a   Wetzel, Christian ^a  

^a Rensselaer Polytechnic Institute   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Cathodoluminescence (CL); GaN; light emitting diode (LED); underlayer (UL)

Indexed keywords

ACTIVE REGIONS; ALLOY COMPOSITIONS; CATHODOLUMINESCENCE (CL); CATHODOLUMINESCENCE SPECTROSCOPY; DEPTH-RESOLVED; DONOR-ACCEPTOR PAIRS; ELECTRON INJECTION LAYERS; GAN; LIGHT OUTPUT; LIGHT-EMITTING DIODE (LED); LOW TEMPERATURES; QUANTUM WELL; RADIATIVE RECOMBINATION; UNDERLAYER (UL); UNDERLAYERS; UNDERLYING LAYERS;

CATHODOLUMINESCENCE; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 77956998196     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2061233     Document Type: Article

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