Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5162-5165

  Torma P T ^a   Svensk, O ^a   Ali, M ^a   Suihkonen, S ^a   Sopanen, M ^a   Odnoblyudov, M A ^b,c   Bougrov, V E ^b,c  

^a AALTO UNIVERSITY   (Finland)

^b Optogan Oy   (Finland)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

78.60.Fi; 81.15.Gh; 85.60.Jb; A1. Atomic force microscopy; A1. X ray diffraction; A3. MOCVD; B1. Nitrides; B3. Light emitting diode; B3. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVES; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; NITRIDES; SCANNING PROBE MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE; X RAY ANALYSIS; X RAY DIFFRACTION;

78.60.FI; 81.15.GH; 85.60.JB; A1. ATOMIC FORCE MICROSCOPY; A1. X-RAY DIFFRACTION; A3. MOCVD; B1. NITRIDES; B3. LIGHT EMITTING DIODE; B3. SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 56249144469     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.031     Document Type: Article

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