Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Journal of Applied Physics

Volumn 115, Issue 11, 2014, Pages

  Brochen, Stéphane ^a,b,c   Lafossas, Matthieu ^a   Robin, Ivan Christophe ^a   Ferret, Pierre ^a   Gemain, Frédérique ^a   Pernot, Julien ^b,c,d   Feuillet, Guy ^a  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC IMPURITIES; CAPACITANCE VOLTAGE MEASUREMENTS; DIFFUSION OF IMPURITIES; DOPANT CONCENTRATIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE SPECTRUM; SATURATION SOLUBILITY; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

DIFFUSION; EPILAYERS; EPITAXIAL GROWTH; IMPURITIES; METALLIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FILMS; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; SINGLE CRYSTALS; SUBSTRATES; VAPORS; ZINC OXIDE;

ALUMINUM;

EID: 84897902719     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4868591     Document Type: Article

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