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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 15, 2011, Pages

Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films

(9) Gabás, Mercedes a Torelli, Piero b Barrett, Nicholas T c Sacchi, Maurizio d,e Bruneval, Fabien f Cui, Ying f Simonelli, Laura g Díaz Carrasco, Pilar a Ramos Barrado, José R a

a UNIVERSITY OF MÁLAGA (Spain)

b LABORATORIO TASC (Italy)

c DIF (France)

d SYNCHROTRON SOLEIL (France)

e Universit Pierre et Marie Curie Paris 6 (France)

f SERVICE DE RECHERCHES DE MÉTALLURGIE PHYSIQUE (France)

g EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80455150067 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.153303 Document Type: Article

Times cited : (20)

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