Electronic structures of silicon doped ZnO

Physica B: Condensed Matter

Volumn 405, Issue 8, 2010, Pages 1980-1985

  Chowdhury, R ^a   Rees, P ^a   Adhikari, S ^a   Scarpa, F ^b   Wilks, S P ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Electronic structure; First principles; Wurtzite ZnO

Indexed keywords

ACCEPTOR LEVELS; DONOR LEVELS; DOPED ZNO; FIRST-PRINCIPLES; GENERALIZED GRADIENT APPROXIMATIONS; IN-BAND; P-TYPE; SI CONCENTRATION; WURTZITES; ZNO;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ZINC; ZINC OXIDE; ZINC SULFIDE;

SILICON;

EID: 77649239264     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.01.084     Document Type: Article

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