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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition

(10) Tang, Kun a Gu, Shulin a Li, Shuzhen a Ye, Jiandong a Zhu, Shunming a Chen, Hui a Liu, Jiagao a Zhang, Rong a Shi, Yi a Zheng, Youdou a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALUMINUM ATOMS; BACKGROUND ELECTRON CONCENTRATION; C-SAPPHIRE; CAPACITANCE VOLTAGE MEASUREMENTS; ENHANCED DIFFUSION; EPILAYERS GROWN; GAN BUFFER LAYERS; GROWTH PROCESS; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; INTERFACIAL LAYER; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE SUBSTRATES; SHALLOW DONORS; STRUCTURAL AND ELECTRICAL PROPERTIES; STRUCTURAL QUALITIES; TEMPERATURE DEPENDENT; TOP SURFACE; TWO LAYER MODEL; ZNO; ZNO BUFFER LAYER;

ALUMINUM; ALUMINUM COATINGS; ATOMS; BUFFER LAYERS; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; MASS SPECTROMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SAPPHIRE; SUBSTRATES; ZINC; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 79955154668 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3549136 Document Type: Article

Times cited : (28)

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