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Volumn 92, Issue 14, 2008, Pages

Low residual doping level in homoepitaxially grown ZnO layers

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING;

EID: 42149162320     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907562     Document Type: Article
Times cited : (16)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.