Structural and optical properties of ZnO epitaxial films grown on Al 2O3 (112̄0) substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4110-4113

  Binh, Nguyen Thanh ^a,b   Zhang, Bao Ping ^a,c   Liu, Cheng You ^a,d   Wakatsuki, Kazuki ^a,c   Segawa, Yusaburo ^a,c   Usami, Noritaka ^e   Yamada, Yasuhiro ^e   Kawasaki, Masashi ^e   Koinuma, Hideomi ^f  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b Laboratory for Laser Spectroscopy   (Viet Nam)

^c TOHOKU UNIVERSITY   (Japan)

^d TONGHUA TEACHERS COLLEGE   (China)

^e TOHOKU UNIVERSITY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al2o3; Critical thickness; Epitaxial growth; MOCVD; OMVPE; Photoluminescence exciton exciton scattering; Surface morphology; X ray diffraction; ZnO

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

AL2O3; CRITICAL THICKNESS; EXCITON-EXCITON SCATTERING; ZNO;

SEMICONDUCTING FILMS;

EID: 4644234332     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4110     Document Type: Article

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