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Volumn 598, Issue , 2014, Pages 85-88

Optical and electrical improvements of semipolar (1 1 -2 2) GaN-based light emitting diodes by Si doping of n-GaN template

Author keywords

GaN; LED; Semipolar; Si doped

Indexed keywords

BASAL STACKING FAULTS; GAN; GAN-BASED LIGHT-EMITTING DIODES; HIGH RESOLUTION X RAY DIFFRACTION; OPERATION VOLTAGE; SEMIPOLAR; SI-DOPED; THREADING DISLOCATION;

EID: 84897703835     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.02.031     Document Type: Article
Times cited : (13)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.