Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Song, Keun Man ^a   Kim, Jong Min ^a   Kang, Bong Kyun ^a,b   Yoon, Dae Ho ^b   Kang, S ^c   Lee, Sang Won ^d   Lee, Sung Nam ^d  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Korea Polytechnic University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; ATOMIC CONFIGURATION; C-PLANE SAPPHIRE; GAN TEMPLATE; GROWING SURFACES; GROWTH CONDITIONS; GROWTH MODELS; INGAN/GAN; OPTICAL EMISSIONS; PHOTOLUMINESCENCE PEAK;

GALLIUM NITRIDE; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84861835314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720507     Document Type: Article

References (20)

1. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 406, 865 (2000). 10.1038/35022529
2. A. Crinis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstic, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett. 84, 3663 (2004). 10.1063/1.1738938
3. S. Schulz, T. J. Badcock, M. A. Moram, P. Dawson, M. J. Kappers, C. J. Humphreys, and E. P. O'Reilly, Phys. Rev. B 82, 125318 (2010). 10.1103/PhysRevB.82.125318
4. H. Wang, C. Chen, Z. Gong, J. Zhang, M. G. M. Su, J. Yang, and M. A. Khan, Appl. Phys. Lett. 84, 499 (2004). 10.1063/1.1644054
5. D. S. Li, H. Chen, H. B. Yu, X. H. Zheng, Q. Huang, and J. M. Zhou, J. Cryst. Growth 265, 107 (2004). 10.1016/j.jcrysgro.2004.02.003
6. K.-M. Song, J.-M. Kim, D.-H. Lee, D.-H. Kang, W.-K. Park, C.-S. Shin, C.-G. Ko, S.-M. Hwang, and D.-H. Yoon, J. Cryst. Growth 315, 178 (2011). 10.1016/j.jcrysgro.2010.09.018
7. J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, Appl. Phys. Lett. 93, 101104 (2008). 10.1063/1.2830023
8. K. H. Baik, Y. G. Seo, S.-K. Hong, S. Lee, J. Kim, J.-S. Son, and S.-M. Hwang, IEEE Photon. Technol. Lett. 22, 595 (2010). 10.1109/LPT.2010.2042950
9. A. Chakraborty, T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Jpn. J. Appl. Phys., Part 2 44, L945 (2005). 10.1143/JJAP.44.L945
10. R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 87, 231110 (2005). 10.1063/1.2139841
11. A. Chakraborty, K. C. Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Jpn. J. Appl. Phys., Part 1 45, 8659 (2006). 10.1143/JJAP.45.8659
12. K. H. Lee, P. C. Chang, S. J. Chang, and S. L. Wu, J. Appl. Phys. 110, 083113 (2011). 10.1063/1.3653834
13. A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 86, 031901 (2005). 10.1063/1.1851007
14. T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser, Appl. Phys. Lett. 92, 241109 (2008). 10.1063/1.2945664
15. C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Liu, E. A. Preble, and D. Hanser, J. Cryst. Growth 310, 3987 (2008). 10.1016/j.jcrysgro.2008.06.028
16. M. G. Cheong, C. Liu, H. W. Choi, B. K. Lee, E.-K. Suh, and H. J. Lee, J. Appl. Phys. 93, 4691 (2003). 10.1063/1.1562735
17. S. F. Chichibu, T. Azuhata, T. Sota, T. Mukai, and S. Nakamura, J. Appl. Phys. 88, 5153 (2000). 10.1063/1.1314906
18. Z. L. Fang, J. Y. Kang, and W. Z. Shen, Nanotechnology 20, 045401 (2009). 10.1088/0957-4484/20/4/045401
19. M. Takeguchi, M. R. McCartney, and D. J. Smith, Appl. Phys. Lett. 84, 2103 (2004). 10.1063/1.1689400
20. S.-C. Ling, T.-C. Wang, J.-R. Chen, P.-C. Liu, T.-S. Ko, B.-Y. Chang, T.-C. Lu, H.-C. Kuo, S.-C. Wang, and J.-D. Tsay, IEEE Photon. Technol. Lett. 21, 1130 (2009). 10.1109/LPT.2009.2023234